Abstract In a previous report, we demonstrated the monitoring of electrical resistance of Ga-Na melt and revealed the time dependency of the nitrogen dissolution in Ga-Na flux. In-situ monitoring of nitrogen dissolution process into the Ga-Na melt is important in elucidating the mechanism of Na-flux growth. In this report, we investigate the temperature dependence of nitrogen dissolution with electrical resistance measurement of the Ga-Na melt. The results revealed a significant enhancement of Ga-N bonding formation at high temperature. Dissociation process of nitrogen is thought to be the key factor that determines the rate of nitrogen dissolution.

中文翻译：

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氮溶解对 Na 通量增长的温度依赖性

摘要 在之前的一份报告中，我们展示了 Ga-Na 熔体电阻的监测，并揭示了 Ga-Na 熔剂中氮溶解的时间依赖性。氮溶解到 Ga-Na 熔体中的原位监测对于阐明 Na 助熔剂的生长机制很重要。在本报告中，我们通过测量 Ga-Na 熔体的电阻来研究氮溶解的温度依赖性。结果表明在高温下Ga-N键形成显着增强。氮的解离过程被认为是决定氮溶解速率的关键因素。