Abstract We report on successful growth on InP substrates of InGaAsSb-based strain-compensated multiquantum-well (SC-MQW) structures with band-gap wavelengths longer than 2 μm. For SC-MQW samples with four quantum wells, the use of InGaAsSb instead of InGaAs as a barrier layer suppressed the thickness modulation significantly, and its use as a well layer increased the photoluminescence peak wavelength by more than 100 nm. The number of wells in the InGaAsSb/InGaAsSb SC-MQW could be increased from 4 to 30 by adjusting the net strain to be 0%. The absorption coefficient of the 30-period SC-MQW sample was approximately 7000 cm-1 at a wavelength of 2.1 μm.

中文翻译：

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在 InP (001) 衬底上生长的应变补偿 InGaAsSb/InGaAsSb 多量子阱结构作为波长超过 2 μm 的光吸收体

摘要 我们报告了带隙波长大于 2 μm 的基于 InGaAsSb 的应变补偿多量子阱 (SC-MQW) 结构在 InP 衬底上的成功生长。对于具有四个量子阱的 SC-MQW 样品，使用 InGaAsSb 代替 InGaAs 作为势垒层显着抑制了厚度调制，并且将其用作阱层使光致发光峰值波长增加了 100 nm 以上。通过将净应变调整为 0%，InGaAsSb/InGaAsSb SC-MQW 中的阱数可以从 4 个增加到 30 个。30 周期 SC-MQW 样品在 2.1 μm 波长下的吸收系数约为 7000 cm-1。