In this article, a novel hot wire oxidation–sublimation deposition (HWOSD) technique, as an optional technology, is developed to prepare molybdenum oxide (MoO_x) thin films. Silicon heterojunction (SHJ) solar cells with the HWOSD MoO_x as a hole‐selective transport layer (HSL) are fabricated. A power conversion efficiency up to 21.10% is achieved on a champion SHJ solar cell using a 14 nm MoO_x layer as the HSL. Dark current density–voltage–temperature (J–V–T) characteristics of the SHJ solar cell are measured at temperatures ranging from 200 to 380 K. Transport processes including thermionic emission of electrons over the potential barrier and quantum‐assisted tunneling of holes through the gap states in the MoO_x layer are used to fit the J–V curves of the MoO_x/n‐c‐Si heterojunction. The investigation of the transport mechanisms provides a better understanding of the characteristics of the novel SHJ solar cells and it is helpful to fully demonstrate the potential of such kinds of solar cells in the future.

中文翻译：

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通过热丝氧化-升华沉积制备具有MoOx空穴选择层的硅异质结太阳能电池

在本文中，开发了一种新颖的热线氧化-升华沉积（HWOSD）技术作为一种可选技术，以制备氧化钼（MoO _x）薄膜。制作了具有HWOSD MoO _x作为空穴选择性传输层（HSL）的硅异质结（SHJ）太阳能电池。使用14 nm MoO _x层作为HSL的冠军SHJ太阳能电池可实现高达21.10％的功率转换效率。SHJ太阳能电池的暗电流密度-电压-温度（J–V–T）特性是在200至380 K的温度范围内测量的。传输过程包括电子在势垒上的热电子发射以及通过空穴的量子辅助隧穿MoO _x中的间隙状态层用于拟合MoO _x / n-c-Si异质结的J – V曲线。对传输机制的研究提供了对新型SHJ太阳能电池特性的更好理解，并且有助于充分展示未来这类太阳能电池的潜力。