The effect of unintentionally doped hydrogen on the properties of Mg-doped p-GaN samples grown via metal-organic chemical vapor deposition (MOCVD) is investigated through room temperature photoluminescence (PL) and Hall and secondary ion mass spectroscopy (SIMS) measurements. It is found that there is an interaction between the residual hydrogen and carbon impurities. An increase of the carbon doping concentration can increase resistivity of the p-GaN and weaken blue luminescence (BL) band intensity. However, when hydrogen incorporation increased with carbon doping concentration, the increase of resistivity caused by carbon impurity is weaken and the BL band intensity is enhanced. This suggests that the co-doped hydrogen not only passivate MgGa, but also can passivate carbon impurities in Mg-doped p-GaN.

中文翻译：

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氢可以钝化掺Mg的GaN中的碳杂质。

通过室温光致发光（PL）以及霍尔和二次离子质谱（SIMS）测量，研究了无意掺杂的氢对通过金属有机化学气相沉积（MOCVD）生长的Mg掺杂的p-GaN样品的性能的影响。发现残留的氢和碳杂质之间存在相互作用。碳掺杂浓度的增加可以增加p-GaN的电阻率，并削弱蓝色发光（BL）的带强度。然而，当氢掺入随着碳掺杂浓度的增加而增加时，由碳杂质引起的电阻率的增加被减弱并且BL带强度被增强。这表明，共掺杂的氢不仅钝化了MgGa，而且还可以钝化了Mg掺杂的p-GaN中的碳杂质。