Abstract The crystalline quality of aluminum nitride (AlN) and gallium nitride (GaN) has been investigated through two growth methods on 350 μm [1 1 1]-orientation 2-inch silicon substrates. One method employs nitridation with ammonia prior to the growth of a medium temperature AlN layer. The other method is to preflow trimethyl aluminum (TMAl) prior to the growth of a low temperature AlN layer. The growth parameters are the optimized ones under each growth conditions. The thickness of the GaN layer is adjusted to keep the total thickness of the epilayers unchanged. According to the X-ray diffraction (XRD) rocking curves, with preflow TMAl, both the AlN and GaN present fewer dislocation densities. Reciprocal space maps show that with preflow TMAl treatment, the tensile stress is alleviated both in the AlN and GaN layers. With three layers of indium gallium nitride (InGaN) quantum dots separated by GaN barriers added on the as-grown GaN layer, the sample undergone preflow TMAl has more superb photoluminescence performances of both GaN and InGaN than those of the other one. The root-mean-square surface roughness value obtained by atomic force microscopy is larger in the sample with preflow TMAl treatment. It was due to the a little overlong preflow TMAl time. The transmission electron microscopy (TEM) shows the sample undergone preflow TMAl treatment has fewer defects and abrupt interface between AlN and silicon substrate.

中文翻译：

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两种生长方法在 2 英寸硅衬底上的 AlN 和 GaN 晶体质量比较

摘要 通过两种生长方法在 350 μm [1 1 1] 取向的 2 英寸硅衬底上研究了氮化铝 (AlN) 和氮化镓 (GaN) 的晶体质量。一种方法是在中温 AlN 层生长之前使用氨进行氮化。另一种方法是在生长低温 AlN 层之前预流三甲基铝 (TMAl)。生长参数是每种生长条件下的优化参数。调整GaN层的厚度以保持外延层的总厚度不变。根据 X 射线衍射 (XRD) 摇摆曲线，使用预流 TMAl，AlN 和 GaN 均呈现较少的位错密度。倒易空间图显示，通过预流 TMAl 处理，AlN 和 GaN 层中的拉伸应力均得到缓解。通过在生长的 GaN 层上添加由 GaN 势垒分隔的三层氮化铟镓 (InGaN) 量子点，经过预流 TMAl 的样品具有比另一层更出色的 GaN 和 InGaN 的光致发光性能。用原子力显微镜获得的均方根表面粗糙度值在经过预流TMAl处理的样品中更大。这是由于预流TMAl时间有点过长。透射电子显微镜 (TEM) 显示经过预流 TMAl 处理的样品具有较少的缺陷和 AlN 和硅基板之间的陡峭界面。用原子力显微镜获得的均方根表面粗糙度值在经过预流TMAl处理的样品中更大。这是由于预流TMAl时间有点过长。透射电子显微镜 (TEM) 显示经过预流 TMAl 处理的样品具有较少的缺陷和 AlN 和硅基板之间的陡峭界面。用原子力显微镜获得的均方根表面粗糙度值在经过预流TMAl处理的样品中更大。这是由于预流TMAl时间有点过长。透射电子显微镜 (TEM) 显示经过预流 TMAl 处理的样品具有较少的缺陷和 AlN 和硅基板之间的陡峭界面。