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Structural Origins of the Enhancement in Ionic Conductivity of a Chalcogenide Compound by Adding AgI
ChemElectroChem ( IF 3.5 ) Pub Date : 2020-03-02 , DOI: 10.1002/celc.201902163 Wanchun Qiao 1 , Ang Qiao 1 , Yunhang Tao 2 , Shaoxuan Gu 1 , Yuanzheng Yue 1, 3 , Haizheng Tao 1
ChemElectroChem ( IF 3.5 ) Pub Date : 2020-03-02 , DOI: 10.1002/celc.201902163 Wanchun Qiao 1 , Ang Qiao 1 , Yunhang Tao 2 , Shaoxuan Gu 1 , Yuanzheng Yue 1, 3 , Haizheng Tao 1
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Through a chemo‐mechanical milling process, we prepared a highly conductive (1.1×10−3 S ⋅ cm−1) amorphous 0.5AgI ⋅ 0.5 Ag3PS4 conductor, which is much higher than that of pure amorphous Ag3PS4 (8.5×10−4 S ⋅ cm−1). Detailed structural characterizations indicate that compared to the ionic conductivity of the amorphous Ag3PS4 conductor, the enhancement can be ascribed to the formation of mixed polymeric anions {[PS4]mIn} around Ag+ ions. Through heat‐treatment at 370 °C for 20 minutes, the room temperature ionic conductivity of the 0.5AgI ⋅ 0.5 Ag3PS4 conductor is further enhanced by about 4 times. This enhancement can be ascribed to the following two aspects: 1) the existence of residual amorphous phase with higher ionic conductivity; 2) the connection of the fast ionic conductive interfaces between the deposited Ag7PS6 nano‐crystals and the residual amorphous phase. This work reveals the key roles of both disorder and interface in improving the ionic conductivity of solid‐state electrolytes.
中文翻译：
通过添加AgI来提高硫属化物化合物离子电导率的结构起源
通过化学机械研磨过程中，我们制备的导电性高的（1.1×10 -3 小号⋅厘米-1）无定形0.5AgI⋅0.5的Ag 3 PS 4导体，这是比纯无定形的Ag高得多的3 PS 4（ 8.5×10 -4 S⋅cm -1）。详细的结构特征表明，与无定形Ag 3 PS 4导体的离子电导率相比，增强可以归因于在Ag +周围形成混合聚合物阴离子{[PS 4 ] m I n }离子。通过在370°C下热处理20分钟，0.5AgI⋅0.5 Ag 3 PS 4导体的室温离子电导率进一步提高了约4倍。这种增强可归因于以下两个方面：1）存在具有较高离子电导率的残留无定形相；2）沉积的Ag 7 PS 6纳米晶体与残留非晶相之间的快速离子导电界面的连接。这项工作揭示了无序和界面在提高固态电解质的离子电导率中的关键作用。
更新日期：2020-03-02
中文翻译：
通过添加AgI来提高硫属化物化合物离子电导率的结构起源
通过化学机械研磨过程中，我们制备的导电性高的（1.1×10 -3 小号⋅厘米-1）无定形0.5AgI⋅0.5的Ag 3 PS 4导体，这是比纯无定形的Ag高得多的3 PS 4（ 8.5×10 -4 S⋅cm -1）。详细的结构特征表明，与无定形Ag 3 PS 4导体的离子电导率相比，增强可以归因于在Ag +周围形成混合聚合物阴离子{[PS 4 ] m I n }离子。通过在370°C下热处理20分钟，0.5AgI⋅0.5 Ag 3 PS 4导体的室温离子电导率进一步提高了约4倍。这种增强可归因于以下两个方面：1）存在具有较高离子电导率的残留无定形相；2）沉积的Ag 7 PS 6纳米晶体与残留非晶相之间的快速离子导电界面的连接。这项工作揭示了无序和界面在提高固态电解质的离子电导率中的关键作用。
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