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Fermi-surface dynamics and high thermoelectric performance along the out-of-plane direction in n-type SnSe crystals
Energy & Environmental Science ( IF 32.4 ) Pub Date : 2020/01/16 , DOI: 10.1039/c9ee03897c
Lisha Mao 1, 2, 3, 4, 5 , Yinong Yin 1, 2, 3, 4 , Qiang Zhang 1, 2, 3, 4, 5 , Guo-Qiang Liu 1, 2, 3, 4, 5 , Hongxiang Wang 1, 2, 3, 4, 5 , Zhe Guo 1, 2, 3, 4, 5 , Haoyang Hu 1, 2, 3, 4 , Yukun Xiao 1, 2, 3, 4 , Xiaojian Tan 1, 2, 3, 4, 5 , Jun Jiang 1, 2, 3, 4, 5
Affiliation  

The layered chalcogenide SnSe has attracted great interest for its remarkable ZT records. Here, we report the excellent thermoelectric performance of n-type SnSe single crystals by alloying with PbBr2, where a maximum ZT of 2.1 at 770 K is achieved along the out-of-plane direction. Interestingly, we observed a sharp drop of the carrier mobility at PbBr2 content x = 3%, which terminates the continuous increase of ZT from x = 0.5% to x = 2%. It is shown that the anomalous decrease is due to the evolution of the Fermi surface driven by the enlargement of the out-of-plane axis. When 1% Sn is substituted by Ge, the restoration of the Fermi surface increases the ZT for the x = 3% sample by 200%. This study reveals the crucial role of the Fermi-surface dynamics in n-type SnSe, and the consequent strategy is confirmed to be highly efficient in the optimization of thermoelectric performance.

中文翻译:

n型SnSe晶体沿面外方向的费米表面动力学和高热电性能

层状硫族化物SnSe以其卓越的ZT记录引起了人们的极大兴趣。在这里,我们报告了通过与PbBr 2合金化形成的n型SnSe单晶的出色热电性能,其中沿平面外方向在770 K处获得的最大ZT为2.1。有趣的是,我们观察到在PbBr 2含量x = 3%时载流子迁移率急剧下降,这终止了ZTx = 0.5%到x的连续增加。= 2%。结果表明,异常减少是由于平面外轴的扩大驱动费米表面的演化。当1%的Sn被Ge取代时,费米表面的恢复使x = 3%的样品的ZT增加200%。这项研究揭示了费米表面动力学在n型SnSe中的关键作用,并且其结果被证明在优化热电性能方面非常有效。
更新日期:2020-02-19
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