Abstract InGaN/GaN multiple quantum wells (MQWs) with the same indium content and QW widths were grown by metalorganic chemical vapor deposition using metal precursor flow interruptions of different length. The influence of the growth interruption length on photoluminescence (PL) properties was studied by combining temperature-dependent and spatially-resolved PL spectroscopy. The PL band variations are attributed to the transformation of localizing potential: growth interruptions change the density of indium clusters, which modifies the density of localized states. The optimized localizing potential in the structure grown using 9 s-long growth interruptions facilitated an increase in PL intensity by a factor of up to 2.

中文翻译：

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InGaN MQW 中生长中断与铟偏析之间的相关性

摘要 具有相同铟含量和 QW 宽度的 InGaN/GaN 多量子阱 (MQW) 是通过金属有机化学气相沉积使用不同长度的金属前体流动中断生长的。通过结合温度相关和空间分辨 PL 光谱，研究了生长中断长度对光致发光 (PL) 特性的影响。PL 带的变化归因于定域电位的转变：生长中断改变了铟簇的密度，从而改变了定域态的密度。使用 9 s 长的生长中断生长的结构中优化的定位潜力促进了 PL 强度增加了 2 倍。