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Quantifying the pressure-dependence of work of adhesion in silicon–diamond contacts
Applied Physics Letters ( IF 3.5 ) Pub Date : 2020-02-03 , DOI: 10.1063/1.5127533
Rimei Chen 1 , Sai Bharadwaj Vishnubhotla 2 , Subarna R. Khanal 2 , Tevis D. B. Jacobs 2 , Ashlie Martini 1
Affiliation  

Continuum mechanics models for contacting surfaces assume a constant interfacial energy, or work of adhesion, between materials. Recent studies have challenged this assumption, instead demonstrating that stress-dependent chemical reactions across the interface modify the work of adhesion. Here, we perform 77 adhesion tests on diamond–silicon contacts using in situ transmission electron microscopy and atomistic simulations to quantify how the adhesion changes as a function of applied pressure. The results show a sevenfold increase in the work of adhesion (from approximately 1 to 7 J/m2) with an increase in the mean applied pressure from 0 to 11 GPa, where the most significant increase occurs above 5 GPa. We rule out alternative explanations for the changing work of adhesion, such as electron-beam artifacts, bulk shape change by inelastic deformation, and time-dependent processes such as creep. Therefore, these results confirm the presence of stress-driven chemical reactions in the contact and quantify the resulting change in the adhesion of these materials with applied pressure.Continuum mechanics models for contacting surfaces assume a constant interfacial energy, or work of adhesion, between materials. Recent studies have challenged this assumption, instead demonstrating that stress-dependent chemical reactions across the interface modify the work of adhesion. Here, we perform 77 adhesion tests on diamond–silicon contacts using in situ transmission electron microscopy and atomistic simulations to quantify how the adhesion changes as a function of applied pressure. The results show a sevenfold increase in the work of adhesion (from approximately 1 to 7 J/m2) with an increase in the mean applied pressure from 0 to 11 GPa, where the most significant increase occurs above 5 GPa. We rule out alternative explanations for the changing work of adhesion, such as electron-beam artifacts, bulk shape change by inelastic deformation, and time-dependent processes such as creep. Therefore, these results confirm the presence of stress-driven chemical reactions in the contact and quantify the ...

中文翻译:

量化硅-金刚石接触中粘附功的压力依赖性

接触表面的连续介质力学模型假设材料之间的界面能或粘附功恒定。最近的研究对这一假设提出了挑战,而是证明界面上的应力相关化学反应会改变粘附工作。在这里,我们使用原位透射电子显微镜和原子模拟对金刚石-硅接触进行了 77 次粘附测试,以量化粘附如何随施加的压力而变化。结果表明,随着平均施加压力从 0 GPa 增加到 11 GPa,粘附功增加了七倍(从大约 1 到 7 J/m2),其中最显着的增加发生在 5 GPa 以上。我们排除了对粘附工作变化的其他解释,例如电子束伪影,非弹性变形和蠕变等随时间变化的过程导致块体形状发生变化。因此,这些结果证实了接触中存在应力驱动的化学反应,并量化了这些材料在施加压力下的粘附力的变化。 接触表面的连续介质力学模型假设材料之间的界面能或粘附功恒定. 最近的研究对这一假设提出了挑战,而是证明界面上的应力相关化学反应会改变粘附工作。在这里,我们使用原位透射电子显微镜和原子模拟对金刚石-硅接触进行了 77 次粘附测试,以量化粘附如何随施加的压力而变化。结果表明,随着平均施加压力从 0 GPa 增加到 11 GPa,粘附功增加了七倍(从大约 1 到 7 J/m2),其中最显着的增加发生在 5 GPa 以上。我们排除了对粘附工作变化的其他解释,例如电子束伪影、非弹性变形导致的体积变化以及蠕变等时间相关过程。因此,这些结果证实了接触中存在应力驱动的化学反应,并量化了...
更新日期:2020-02-03
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