It is important to achieve both donor and acceptor doping for correlated oxide semiconductors to cater for elementary device constructions, e.g., establishing a p-n junction and a thermal couple or a thermoelectric π-joint in correlated electronics. The perovskite family of rare-earth nickelates (ReNiO3) exhibits correlated transportation characters (e.g., metal to insulator transitions and thermistor transportations) dominated by electron conductions, as indicated by their negative thermopower for n-type materials. Herein, we demonstrate the presence of positive magnitude of thermopower as achieved in GdNiO3 single crystalline thin films, indicating a hole dominated transportation for p-type correlated semiconductors. Probing the Ni-L edge of GdNiO3 via near edge x-ray absorption fine structure indicates its distinguished intermediate acceptor energy states that are more easily occupied by the thermal excited valence band electrons. The hole-dominated transportation for GdNiO3 was further confirmed by its increased localization length and opposite sign in magnetoresistance, which are derived from the general tendency of ReNiO3, owing to the larger effective mass of holes compared to electrons. The discovery of p-types in GdNiO3 will further promote establishing ReNiO3-based elementary semiconductive devices in the field of correlated electronics.It is important to achieve both donor and acceptor doping for correlated oxide semiconductors to cater for elementary device constructions, e.g., establishing a p-n junction and a thermal couple or a thermoelectric π-joint in correlated electronics. The perovskite family of rare-earth nickelates (ReNiO3) exhibits correlated transportation characters (e.g., metal to insulator transitions and thermistor transportations) dominated by electron conductions, as indicated by their negative thermopower for n-type materials. Herein, we demonstrate the presence of positive magnitude of thermopower as achieved in GdNiO3 single crystalline thin films, indicating a hole dominated transportation for p-type correlated semiconductors. Probing the Ni-L edge of GdNiO3 via near edge x-ray absorption fine structure indicates its distinguished intermediate acceptor energy states that are more easily occupied by the thermal excited valence band electrons. The hole-dominated transportation for GdNiO3 was further confirmed by it...

中文翻译：

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稀土镍酸盐电子亚稳钙钛矿家族中p-/n-型的相关输运

实现相关氧化物半导体的施主和受主掺杂以适应基本器件结构是很重要的，例如，在相关电子器件中建立 pn 结和热电偶或热电 π 接头。钙钛矿系列稀土镍酸盐 (ReNiO3) 表现出以电子传导为主的相关传输特性（例如，金属到绝缘体的转变和热敏电阻传输），正如它们对 n 型材料的负热电势所表明的那样。在这里，我们证明了在 GdNiO3 单晶薄膜中实现的正热电势的存在，表明 p 型相关半导体的空穴占主导地位的传输。通过近边缘 X 射线吸收精细结构探测 GdNiO3 的 Ni-L 边缘表明其显着的中间受体能态更容易被热激发价带电子占据。GdNiO3 的空穴主导传输通过其增加的定域长度和磁阻中的相反符号进一步证实，这源于 ReNiO3 的一般趋势，因为与电子相比，空穴的有效质量更大。GdNiO3 中 p 型的发现将进一步促进相关电子领域中基于 ReNiO3 的元素半导体器件的建立。在相关电子设备中建立 pn 结和热电偶或热电 π 接头。钙钛矿系列稀土镍酸盐 (ReNiO3) 表现出以电子传导为主的相关传输特性（例如，金属到绝缘体的转变和热敏电阻传输），正如它们对 n 型材料的负热电势所表明的那样。在这里，我们证明了在 GdNiO3 单晶薄膜中实现的正热电势的存在，表明 p 型相关半导体的空穴占主导地位的传输。通过近边缘 X 射线吸收精细结构探测 GdNiO3 的 Ni-L 边缘表明其独特的中间受体能态更容易被热激发价带电子占据。