The electronic structure of an amorphous SnO (a-SnO) thin film was examined by using spectroscopic methods including tender and soft x-ray absorption spectroscopies (XAS) and spectroscopic ellipsometry (SE). XAS at the Sn L1−, L3−, and O K-edges revealed that in a-SnO, the Sn 5px/y orbital states, which comprise the conduction band minimum (CBM), are broadened significantly compared to the case of crystalline SnO, whereas the hybridized Sn 5spz-O 2p states above the CBM are persistent. A lowering of the 5px/y states at the CBM by −0.4 eV and a reduction of the indirect bandgap were also observed. These orbital-dependent evolutions upon amorphization were caused by weakened interlayer couplings in the disordered quasi-2-dimensional semiconductor. However, the functionality of a-SnO as a p-type semiconductor would not be degraded significantly because the isotropic Sn 5s orbital states dominate in the valence band states.The electronic structure of an amorphous SnO (a-SnO) thin film was examined by using spectroscopic methods including tender and soft x-ray absorption spectroscopies (XAS) and spectroscopic ellipsometry (SE). XAS at the Sn L1−, L3−, and O K-edges revealed that in a-SnO, the Sn 5px/y orbital states, which comprise the conduction band minimum (CBM), are broadened significantly compared to the case of crystalline SnO, whereas the hybridized Sn 5spz-O 2p states above the CBM are persistent. A lowering of the 5px/y states at the CBM by −0.4 eV and a reduction of the indirect bandgap were also observed. These orbital-dependent evolutions upon amorphization were caused by weakened interlayer couplings in the disordered quasi-2-dimensional semiconductor. However, the functionality of a-SnO as a p-type semiconductor would not be degraded significantly because the isotropic Sn 5s orbital states dominate in the valence band states.

中文翻译：

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使用 X 射线吸收光谱研究非晶 SnO 薄膜的电子结构

通过使用光谱方法检查非晶 SnO (a-SnO) 薄膜的电子结构，包括嫩和软 X 射线吸收光谱 (XAS) 和光谱椭偏仪 (SE)。Sn L1-、L3- 和 O K 边缘处的 XAS 显示，在 a-SnO 中，与晶体 SnO 相比，包含导带最小值 (CBM) 的 Sn 5px/y 轨道状态显着展宽，而 CBM 上方的杂化 Sn 5spz-O 2p 状态是持久的。还观察到 CBM 处的 5px/y 状态降低了 -0.4 eV 和间接带隙的降低。这些非晶化时轨道相关的演化是由无序准二维半导体中层间耦合减弱引起的。然而，a-SnO 作为 p 型半导体的功能不会显着降低，因为各向同性 Sn 5s 轨道状态在价带状态中占主导地位。 通过使用光谱检查非晶 SnO (a-SnO) 薄膜的电子结构方法包括嫩和软 X 射线吸收光谱 (XAS) 和光谱椭偏仪 (SE)。Sn L1-、L3- 和 O K 边缘的 XAS 显示，在 a-SnO 中，与晶体 SnO 相比，包含导带最小值 (CBM) 的 Sn 5px/y 轨道状态显着展宽，而 CBM 上方的杂化 Sn 5spz-O 2p 状态是持久的。还观察到 CBM 处的 5px/y 状态降低了 -0.4 eV 和间接带隙的降低。这些非晶化时轨道相关的演化是由无序准二维半导体中层间耦合减弱引起的。然而，a-SnO 作为 p 型半导体的功能不会显着降低，因为各向同性 Sn 5s 轨道状态在价带状态中占主导地位。