We demonstrate the transmission of beyond-100 Gb/s Nyquist half-cycle 16-quadrature-amplitude modulation (16-QAM) subcarrier modulation (SCM) signals with a compact silicon-based GeSi electro-absorption modulator. In combination with nonlinear compensation, the measured bit-error rate (BER) after 2 km standard single-mode fiber (SSMF) transmission is below the 20% hard-decision forward error-correction (HD-FEC) threshold of $1.5\times 10^{\mathbf {-2}}$ for single-lane 160 Gb/s operation. The presented modulator shows great potential for high-capacity and low-power-consumption silicon-photonic transceivers for data-center interconnects.

中文翻译：

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基于 GeSi EAM 的 160Gb/s 奈奎斯特半周期副载波调制传输

我们演示了使用紧凑型硅基 GeSi 电吸收调制器传输超过 100 Gb/s 奈奎斯特半周期 16 正交幅度调制 (16-QAM) 副载波调制 (SCM) 信号。结合非线性补偿，在 2 公里标准单模光纤 (SSMF) 传输后测得的误码率 (BER) 低于 20% 硬判决前向纠错 (HD-FEC) 阈值 $1.5\times 10 ^{\mathbf {-2}}$ 用于单通道 160 Gb/s 操作。所提出的调制器显示出用于数据中心互连的高容量和低功耗硅光子收发器的巨大潜力。