Sb 2 Te 3 is a layered material with outstanding properties leading to applications in interfacial phase-change memories, spintronic and thermoelectric devices. For successful integration in devices, controlling the orientation of the atomic planes of Sb 2 Te 3 deposited by sputtering on various materials used for electrodes and on dielectric layers is required. We have succeeded in depositing Sb 2 Te 3 thin films (thickness in the range 10–100 nm) by sputtering in industrial deposition equipments on WSi, TiN, amorphous Si as well as on native and thermal silicon oxide layers. The structure and orientation of the films were studied by x-ray diffraction. The Sb and Te planes are found parallel to the substrate, whatever the nature of the bottom material, provided that the sputtering conditions avoid a Te deficiency in the deposited film. These results show that deposition of Sb 2 Te 3 with out-of-plane or...

中文翻译：

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高取向层状Sb 2 Te 3薄膜在各种材料上的生长机理

Sb 2 Te 3是一种具有优异性能的层状材料，可应用于界面相变存储器，自旋电子和热电设备。为了成功地集成在装置中，需要控制通过溅射沉积在用于电极的各种材料上和介电层上的Sb 2 Te 3的原子面的取向。通过在WSi，TiN，非晶硅以及自然氧化硅和热氧化硅层上的工业沉积设备中进行溅射，我们已经成功地沉积了Sb 2 Te 3薄膜（厚度在10–100 nm范围内）。通过X射线衍射研究了膜的结构和取向。无论底材料的性质如何，只要溅射条件避免沉积膜中的Te不足，Sb和Te平面都平行于基板。