Wavelength tunable lasers are increasingly needed as key components for wavelength resource management technologies in future dense wavelength division multiplexing (DWDM) systems. While material systems with multiple quantum wells as an active region are widely used in long‐wavelength tunable lasers, the unique advantages of InAs/GaAs quantum dots (QDs) for low‐power operation, excellent thermal stability, and wide spectral bandwidth may open a new avenue in this field. Combining the advantages of QDs with a special designed half‐wave coupled cavity structure, directly modulated, single‐mode, tunable InAs/GaAs QD lasers are demonstrated at 1.3 µm wavelength range. The half‐wave coupler provides an active–active coupled‐cavity tunable structure without involving gratings or multiple epitaxial growths, producing synchronous power transfer in the two output waveguides and high single‐mode selectivity. 27‐channel wavelength switching is achieved with side‐mode‐suppression‐ratio of around 35 dB. Under continuous‐wave electrical injection, over 9 mW output power can be measured with 716 kHz Lorentzian linewidth, 4 GHz 3‐dB bandwidth, and 8 Gbit s⁻¹ non‐return‐to‐zero signal modulation by directly probing the chip.

中文翻译：

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直接调制的1.3 µm单模可调量子点激光器

在未来的密集波分复用（DWDM）系统中，越来越需要波长可调激光器作为波长资源管理技术的关键组件。虽然具有多个量子阱作为有源区的材料系统广泛用于长波长可调谐激光器，但是InAs / GaAs量子点（QD）的低功耗，优异的热稳定性和宽光谱带宽的独特优势可能会开启这个领域的新途径。将QD的优势与特殊设计的半波耦合腔结构相结合，可在1.3 µm波长范围内演示直接调制，单模，可调式InAs / GaAs QD激光器。半波耦合器提供了一种有源-有源耦合腔可调结构，而无需涉及光栅或多个外延生长，在两个输出波导中产生同步功率传输，并具有很高的单模选择性。边模抑制比约为35 dB，可实现27通道波长切换。在连续波电注入下，可以用716 kHz洛伦兹线宽，4 GHz 3 dB带宽和8 Gbit s测量超过9 mW的输出功率。通过直接探测芯片可实现⁻¹不归零信号调制。