Abstract In a combined scanning tunneling microscopy and high-resolution transmission electron microscopy study, the internal atomic structure of terbium silicide nanowires on Si(001) capped with silicon is determined. Room temperature capping by amorphous silicon preserves the original nanowire structure, and the nanowires with a usual height of two silicide layers are found to consist of hexagonal TbSi2 with the c-axis in nanowire direction, in contrast to previous assumptions. At larger heights, the nanowires are formed from tetragonal TbSi2. Capping at elevated temperatures results in a shape transition towards higher and more compact nanowires consisting of hexagonal or tetragonal TbSi2 and a crystalline silicon overlayer that shows stacking faults and twin boundaries starting at the nanowires.

中文翻译：

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硅覆盖的 Si(001) 上的铽硅化物纳米线的内部原子结构

摘要 在结合扫描隧道显微镜和高分辨率透射电子显微镜的研究中，确定了硅覆盖的 Si(001) 上的硅化铽纳米线的内部原子结构。室温下非晶硅覆盖保留了原始的纳米线结构，并且发现通常高度为两个硅化物层的纳米线由六边形 TbSi2 组成，c 轴在纳米线方向，与之前的假设相反。在更高的高度，纳米线由四方 TbSi2 形成。在升高的温度下进行封盖会导致形状转变为更高、更紧凑的纳米线，该纳米线由六方或四方 TbSi2 和晶体硅覆盖层组成，该层显示出从纳米线开始的堆垛层错和孪晶边界。