Toward memristor scaling, it becomes increasingly challenging to maintain reliable switching as the interelectrode distance shrinks to smaller and smaller scale. In particular, the memristive active layers are usually fragile and prone to metal-integration-induced damage. To adapt an ultrathin active switching layer for low-voltage operation requires alternative damage-free metal-integration strategies. Here, by adopting a van der Waals (vdW) metal-integration approach, we construct memristors with vdW contact between metal electrode and ultrathin native oxide on 2D material SnSe. The mild vdW-integration process preserves the delicate SnO_x and enables reliable Ag/SnO_x/SnSe memristor with low operation voltage, high ON/OFF ratio >10³, and excellent endurance and retention properties. Furthermore, the memristors feature gate-tunable neuromorphic functions. By carrying out multiterminal measurements and elemental analyses, we reveal an electrochemical metallization and Ag filament formation switching mechanism. Our strategy defines a unique vdW-integration solution for fragile memristive materials.

对于忆阻器缩放，随着电极间距离缩小到越来越小的规模，保持可靠的切换变得越来越具有挑战性。特别地，忆阻活性层通常是易碎的并且易于金属结合引起的损坏。为了使超薄有源开关层适应低压运行，需要采用其他无损金属集成策略。在这里，通过采用范德华（vdW）金属集成方法，我们在2D材料SnSe上的金属电极和超薄天然氧化物之间建立了具有vdW接触的忆阻器。温和的vdW集成工艺可保留精细的SnO _x并实现可靠的Ag / SnO _x / SnSe忆阻器，具有低工作电压，高开/关比> 10 ³，以及出色的耐久性和保持性。此外，忆阻器具有门可调神经形态功能。通过进行多端子测量和元素分析，我们揭示了电化学金属化和银丝形成的转换机制。我们的策略为易碎的忆阻材料定义了独特的vdW集成解决方案。