This study investigated the dependence of crystal structure on growth temperature in the TiO₂ thin films deposited on c-, a-, and r-plane sapphire substrates by reactive RF magnetron sputtering. Deposition of the films was carried out at temperatures ranging from 400°C to 700°C. X-ray diffraction patterns revealed that TiO₂ with a rutile structure was epitaxially grown on substrates independent of substrate orientations. TiO₂ thin films were grown with a dominant peak of (200) on c-plane sapphire, and their crystallization and crystal quality were improved with growth temperature. For the films formed on a-plane and r-plane sapphires, the preferential orientation was [101]. However, the intensities of the (101) peak were very weak and were not dependent on growth temperature. The TiO₂ thin films formed on the sapphire had a band gap of about 3.7 eV, which was larger than that of bulk (3.03 eV).

这项研究调查了晶体结构对通过反应性射频磁控溅射沉积在c面，a面和r面蓝宝石衬底上的TiO ₂薄膜中生长温度的依赖性。膜的沉积在400℃至700℃的温度范围内进行。X射线衍射图表明，具有金红石结构的TiO ₂外延生长在基底上，与基底取向无关。二氧化钛₂薄膜在c面蓝宝石上生长时具有（200）主峰，随着生长温度的提高，其结晶度和晶体质量得到改善。对于在a面和r面蓝宝石上形成的膜，优先取向为[101]。但是，（101）峰的强度非常弱，并且与生长温度无关。在蓝宝石上形成的TiO ₂薄膜的带隙约为3.7 eV，大于体隙（3.03 eV）。