The crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.

中文翻译：

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非晶Ge2Sb2Te5硫属化物材料的电子束辐照诱导结晶行为

通过原位透射电子显微镜 (TEM) 研究了电子束辐照诱导的非晶 Ge2Sb2Te5 相变材料的结晶。无定形基体在受到 200 keV 电子束长时间照射后转变为部分结晶状态。实时观察表明，非晶 Ge2Sb2Te5 薄膜的结晶是通过 TEM 中电子束照射下的成核和生长机制发生的。虽然 2D 投影的不确定性仍然存在，但已观察到原子核优先沿 <100> 方向生长。