Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based nonvolatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.

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基于金纳米粒子的非易失性存储器件的最新进展

最近，基于金属纳米粒子的非易失性存储器件的制造取得了很大进展。在众多纳米颗粒中，金纳米颗粒是非易失性存储器件中电荷俘获元件使用最广泛的材料之一，因为它们化学性质稳定，易于合成，并具有高功函数。各种合成方法已被应用于制造基于金纳米粒子的非易失性存储器件，最近的进展表明金是一种非常有前途的非易失性存储器应用材料。在本文中，回顾了基于金纳米颗粒的非易失性存储设备的制造和表征的最新进展，重点是闪存类型的存储设备。详细的器件制造、表征、