In this work, AgInS2 photoelectrodes doped with Ga element and deposited Co–Pi co–catalyst have been prepared on FTO substrates by hydrothermal and electrochemical deposition methods. In photoelectrochemical (PEC) measurements, the photocurrent density of AgInS2/Ga5%/Co–Pi photoelectrodes (2.18 mA/cm2 at 1.2 V vs. RHE) is about 3.25 times higher than that of pure AgInS2 photoelectrodes (0.67 mA/cm2 at 1.2 V vs. RHE). The enhanced PEC performance could be ascribed to the improved light absorption by doping Ga element and fast charge separation by depositing Co–Pi co–catalyst. This work highlights that doping appropriate metal element and loading co-catalyst to synergistically modify photoelectrodes are practicable approach for PEC water splitting.

中文翻译：

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用 Co-Pi 钴催化剂改性的 Ga 掺杂 AgInS2 用于高效光电化学水分解

在这项工作中，通过水热和电化学沉积方法在 FTO 衬底上制备了掺杂 Ga 元素和沉积 Co-Pi 助催化剂的 AgInS2 光电极。在光电化学 (PEC) 测量中，AgInS2/Ga5%/Co-Pi 光电极的光电流密度（1.2 V vs. RHE 时为 2.18 mA/cm2）比纯 AgInS2 光电极（1.2 V 时为 0.67 mA/cm2）高约 3.25 倍V 与 RHE）。增强的 PEC 性能可归因于通过掺杂 Ga 元素改善光吸收和通过沉积 Co-Pi 助催化剂实现快速电荷分离。这项工作强调掺杂适当的金属元素和负载助催化剂来协同修饰光电极是 PEC 水分解的可行方法。