Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies. An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications. We demonstrate the proton injection on SrCrO₃ thin films via an efficient low-energy hydrogen plasma implantation experiments, without destroying the original lattice framework. Hydrogen ions accumulate largely at the interfacial regions with amorphous character which extend about one-third of the total thickness. The H_xSrCrO₃ (HSCO) thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure. Proton doping induces the change of Cr oxidation state from Cr⁴⁺ to Cr³⁺ in HSCO thin films and a transition from metallic to insulating phase. Our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.

中文翻译：

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通过低能氢等离子体注入方法通过质子化对钙钛矿SrCrO 3薄膜的电子态进行调制

过渡金属氧化物的氢化提供了一个强大的平台，可以调整物理功能以及在现代电子技术中的潜在应用。理想的无损高效氢掺入方法对于实际的技术应用非常重要。我们通过有效的低能氢等离子体注入实验证明了SrCrO ₃薄膜上的质子注入，而没有破坏原始的晶格框架。氢离子大量聚集在具有非晶特性的界面区域，该界面区域延伸了总厚度的约三分之一。H _x SrCrO ₃（HSCO）薄膜看起来像剥落的层，但是保留了完全变形的状态和扭曲的钙钛矿结构。质子掺杂引起HSCO薄膜中Cr的氧化态从Cr ⁴⁺变为Cr ³⁺以及从金属相转变为绝缘相。我们的研究表明，在基于质子的方法中处理电子相时，一个有吸引力的平台可能会通过低能氢等离子体注入方法为纳米器件提供潜在的剥离策略。