In this work, lead-free piezoelectric ceramics 0.65Bi_1.05Fe_1-xGa_xO₃–0.35BaTiO₃, where x = 0, 0.01, 0.02, 0.025, and 0.03 abbreviated as BFG–BT have been synthesized by a conventional solid-state reaction followed by air quenching process. The effects of Ga on crystal structure, microstructure and electric properties of the ceramics have been investigated. X-ray diffraction analysis showed that Ga addition into BF-BT ceramics caused no significant change in crystal structure. However, improvements in ferroelectric, dielectric and piezoelectric properties were obtained at the optimum composition of Ga addition in BF-BT ceramics. A static piezoelectric constant of d₃₃ = 145 pC/N with high Curie temperature T_C = 452 °C were obtained at 2 mol% Ga modified BF–BT ceramics.

在这项工作中， 通过常规固体合成了无铅压电陶瓷0.65Bi _1.05 Fe _{1- x} Ga _x O ₃ –0.35BaTiO ₃，其中x = 0、0.01、0.02、0.025和0.03分别缩写为BFG-BT。态反应，然后进行空气淬火过程。研究了Ga对陶瓷晶体结构，微观结构和电性能的影响。X射线衍射分析表明，向BF-BT陶瓷中添加Ga不会引起晶体结构的显着变化。但是，在BF-BT陶瓷中添加Ga的最佳组成可以改善铁电，介电和压电性能。静态压电常数d ₃₃  = 145 pC / N，居里温度高 ，在2 mol％Ga改性的BF-BT陶瓷中获得T _C = 452°C。