In this study, phase evolution, microstructure, and microwave dielectric properties of (Ba_0.98Na_0.02)(Mg_0.48M³⁺_0.02W_0.5)O₃ (M³⁺ = Al, Ga, Sc, In, Yb, Y, Dy, Gd, and Sm) ceramics sintered at 1700 °C for 1 h were investigated. All the compounds exhibited an ordered cubic perovskite structure. Regardless of the ionic radius of the doped M³⁺ ions, BaWO₄ was detected as the secondary phase in all the compounds. The field emission scanning electron microscopy (FE-SEM) images revealed a dense microstructure in all the compounds, except in the Al-doped compound, which exhibited an insufficient grain growth. The large and irregularly shaped grains indicated that the liquid phase sintering occurred. Splitting of the A_1g(O) mode was observed in the Raman spectra of large M³⁺ ion-doped compounds. Splitting of the F_2g modes did not occur and the bands were sharp, indicating that the cubic symmetry was retained. As the ionic radius of the doped M³⁺ ions increased, the dielectric constant (ε_r) increased slightly. The compounds doped with M³⁺ = Sc, In, Yb, and Y exhibited a very high quality factor (Q × f₀) in the range of 250,000 ~ 280,000 GHz. In the case of the compounds doped with M³⁺ = Al, Ga, Sc, In, Yb, Y, and Dy, the value of the temperature coefficient of resonant frequency (τ_f) was in the range of −24 ~ −19 ppm/°C, while the Gd and Sm-doped compounds exhibited positive values of 2.8 and 31.2 ppm/°C, respectively. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of the In-doped compound, i.e., (Ba_0.98Na_0.02)(Mg_0.48In_0.02W_0.5)O₃, were 18.7, 286,557 GHz, and − 24.4 ppm/°C, respectively.

在这项研究中，（Ba _0.98 Na _0.02）（Mg _0.48 M ³⁺ _0.02 W _0.5）O ₃（M ³⁺  = Al，Ga，Sc，In，Yb，Y，Dy的相变，微观结构和微波介电性能，Gd和Sm）陶瓷在1700°C烧结1 h进行了研究。所有化合物均显示出有序的立方钙钛矿结构。不论掺杂的M ³⁺离子的离子半径如何，BaWO ₄在所有化合物中被检测为第二相。场发射扫描电子显微镜（FE-SEM）图像显示，除掺Al化合物中晶粒生长不足外，所有化合物均具有致密的微观结构。大且不规则形状的晶粒表明发生了液相烧结。在大型M ³⁺离子掺杂化合物的拉曼光谱中观察到A _1g（O）模式的分裂。F _2g模未发生分裂，谱带清晰，表明保留了立方对称性。作为掺杂M的离子半径³⁺离子增加时，介电常数（ε _{- [R} ）略有增加。掺杂有M ³⁺的化合物 = Sc，In，Yb和Y在250,000〜280,000 GHz范围内表现出非常高的品质因数（Q×f ₀）。在掺杂有M ³⁺  = Al，Ga，Sc，In，Yb，Y和Dy的化合物的情况下，谐振频率的温度系数（_τf）的值在-24〜-19的范围内ppm /°C，而掺Gd和Sm的化合物分别显示正值2.8和31.2 ppm /°C。In掺杂的化合物（Ba _0.98 Na _0.02）（Mg _0.48 In _0.02 W _0.5）O ₃的介电常数，品质因数和谐振频率的温度系数分别为18.7、286,557 GHz和-24.4 ppm /分别为℃。