In this article, segregation and thermal dissociation kinetics of hydrogen at a large-angle general grain boundary in crystalline silicon have been investigated using deuterium, a readily identifiable isotope that duplicates hydrogen chemistry. Segregation or trapping of introduced deuterium (hydrogen) was found to take place at the (110)/(001) Si grain boundary. The segregation coefficient (k) of deuterium (hydrogen) at the grain boundary was determined as k≈24±3 at 100°C. Thermal dissociation of deuterium (hydrogen) from the grain boundary obeyed first-order kinetics with an activation energy of ∼1.62 eV.

中文翻译：

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氢在（110）/（001）硅晶界处的偏析和热解离

在本文中，已经研究了使用氘（重现氢化学的一种易于识别的同位素）研究晶体硅中大角度晶界处氢的偏析和热离解动力学。发现在（110）/（001）Si晶界处发生了引入的氘（氢）的分离或捕获。偏析系数（ķ在晶界氘（氢）的）被确定为ķ ≈24±3在100℃下。氘（氢）从晶界的热解离遵循一级动力学，活化能约为1.62 eV。