Silicon nanowires (SiNWs) are quasi-one-dimensional structures in which electrons are spatially confined in two directions and they are free to move in the orthogonal direction. The subband decomposition and the electrostatic force field are obtained by solving the Schrödinger–Poisson coupled system. The electron transport along the free direction can be tackled using a hydrodynamic model, formulated by taking the moments of the multisubband Boltzmann equation. We shall introduce an extended hydrodynamic model where closure relations for the fluxes and production terms have been obtained by means of the Maximum Entropy Principle of Extended Thermodynamics, and in which the main scattering mechanisms such as those with phonons and surface roughness have been considered. By using this model, the low-field mobility of a Gate-All-Around SiNW transistor has been evaluated.

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使用扩展的流体动力学模型评估硅纳米线晶体管中的低场电子迁移率

硅纳米线（SiNWs）是准一维结构，其中电子在两个方向上受到空间限制，并且它们可以在正交方向上自由移动。子带分解和静电力场是通过求解Schrödinger-Poisson耦合系统获得的。可以使用流体动力学模型来解决沿自由方向的电子传输问题，该模型通过考虑多子带Boltzmann方程的矩来确定。我们将引入一个扩展的水动力模型，其中通过扩展热力学的最大熵原理获得了通量和生产项的封闭关系，并考虑了主要的散射机理，例如具有声子和表面粗糙度的散射机理。通过使用此模型，