An integrate approach of growing vertical axial heterostructure (AH) nanowire (NW) with TiO₂ and In₂O₃ may provide an alternative route for efficient improvement in internal gain and photosensitivity. Here, TiO₂/In₂O₃ AH NW is synthesized on p-Si substrate inside e-beam evaporator using glancing angle deposition technique. Field emission gun scanning electron microscopy confirms the growth of vertically aligned TiO₂/In₂O₃ AH NW NWs. Averagely, 1.5 times absorption enhancement is observed in TiO₂/In₂O₃ AH NW compared to the as-deposited TiO₂ NW sample. The designed TiO₂/In₂O₃ AH NW device shows superior optoelectronic performance in terms of fast response (T_R = 52.96 ms and T_F = 89.32 ms), high photosensitivity (∼1000 times), and good rectification ratio (∼10 times). In addition, maximum responsivity (11.17 A/W), high internal gain (36.8), superior detectivity (3.14 × 10¹⁴ Jones) and low noise equivalent power (8.92 × 10⁻¹⁵ W) are obtained for TiO₂/In₂O₃ AH NW. A large linear dynamic range value of 59.14 dB is obtained for TiO₂/In₂O₃ AH NW due to prolonged carrier recombination lifetime, multiple light scattering within NWs and efficient charge separation along the length of heterostructure. Therefore, the outstanding optoelectronic properties obtained with TiO₂/In₂O₃ AH NW will ensure a wider promising electronic and optoelectronic device applications.

中文翻译：

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具有高比检测率的同型 n-TiO2/In2O3 异质结构纳米线阵列的表面状态控制优越的光电检测性能

用TiO ₂和In ₂ O ₃生长垂直轴向异质结构（AH）纳米线（NW）的集成方法可以为有效提高内部增益和光敏性提供替代途径。在这里，TiO ₂ /In ₂ O ₃ AH NW 是使用掠射角沉积技术在电子束蒸发器内的 p-Si 衬底上合成的。场发射枪扫描电子显微镜证实了垂直排列的 TiO ₂ /In ₂ O ₃ AH NW NW的生长。平均而言，在 TiO ₂ /In ₂ O _{3 中}观察到 1.5 倍的吸收增强AH NW 与沉积态的 TiO ₂ NW 样品相比。设计的 TiO ₂ /In ₂ O ₃ AH NW 器件在快速响应（T _R = 52.96 ms 和 T _F = 89.32 ms）、高光敏性（~1000 倍）和良好的整流比（~10次）。此外，TiO ₂ /In ₂ O获得最大响应度（11.17 A/W）、高内部增益（36.8）、卓越的探测能力（3.14 × 10 ¹⁴ Jones）和低噪声等效功率（8.92 × 10 ^-15 W）₃啊西北。TiO ₂获得了 59.14 dB 的大线性动态范围值/In ₂ O ₃ AH NW 由于延长的载流子复合寿命、NW 内的多次光散射和沿异质结构长度的有效电荷分离。因此，TiO ₂ /In ₂ O ₃ AH NW获得的出色光电性能将确保更广泛的有前途的电子和光电器件应用。