The combined effects of the deposition temperature and a hydrogen post-annealing treatment on the structural, electrical, and optical properties of Ga-doped ZnO (GZO) films were investigated as a potential substitute for indium tin oxide transparent conductive oxide (TCO). On the as-deposited films, increasing the deposition temperature initially improved the electrical properties, but a deposition temperature in excess of 423 K resulted in the deterioration of the electrical properties due to the development of ZnGa₂O₄ and Ga₂O₃ phases originating from the excessive amount of the Ga dopant. While a post-annealing treatment of the GZO films in hydrogen leveled off the overall properties, improvement in the electrical property was observed only in films initially deposited at room temperature. This is attributed to the excessively high concentration of the dopant Ga released from ZnGa₂O₄ and Ga₂O₃ during the post-annealing treatment. It is therefore suggested that in the preparation of TCOs based on GZO films, the concentration of the dopant Ga should be carefully controlled to obtain the optimal properties by suppressing the formation of ZnGa₂O₄ and Ga₂O₃ that occurs due to the presence of excess Ga.

研究了沉积温度和氢后退火处理对掺杂Ga的ZnO（GZO）膜的结构，电学和光学性质的综合影响，以作为铟锡氧化物透明导电氧化物（TCO）的潜在替代物。在沉积后的膜上，升高沉积温度最初改善了电性能，但由于ZnGa ₂ O ₄和Ga ₂ O _3的形成，超过423 K的沉积温度导致电性能下降。由过量的Ga掺杂剂引起的相。尽管在氢气中对GZO膜进行了退火后处理使总体性能趋于平稳，但仅在最初在室温下沉积的膜中才观察到电性能的改善。这归因于在退火后处理期间从ZnGa ₂ O ₄和Ga ₂ O ₃释放的掺杂剂Ga的浓度过高。因此建议在制备基于GZO膜的TCO时，应仔细控制掺杂剂Ga的浓度，以通过抑制ZnGa ₂ O ₄和Ga ₂ O ₃的形成来获得最佳性能。 由于过量的Ga的存在而发生。