The etch characteristics of platinum films and the etch selectivities for platinum over the mask materials in BCl₃/Ar and CF₄/Ar ICP discharges have been investigated to establish a process window for the thick platinum structure formation in MEMS devices. Maximum etch rates of ≈1800 Å/minute and ≈1200 Å/minute were obtained at a moderate ICP source power (750 W) and a relatively high rf chuck power (400 W) condition for CF₄/Ar and BCl₃/Ar ICP discharges, respectively. Maximum etch selectivities of ≈2.6 for platinum over Al and of ≈2.1 for platinum over ZnO were obtained. CF₄/Ar ICP etching with aluminum mask layer seems to be a very attractive tool for the fabrication of MEMS devices containing a thick platinum structure layer.

研究了BCl ₃ / Ar和CF ₄ / Ar ICP放电中铂材料在掩模材料上的铂膜刻蚀特性和刻蚀选择性，从而为MEMS器件中厚铂结构的形成建立了工艺窗口。在CF ₄ / Ar和BCl ₃ / Ar ICP的中等ICP源功率（750 W）和相对较高的rf吸盘功率（400 W）的条件下，获得的最大蚀刻速率约为1800Å/分钟和1200Å/分钟。分别放电。获得了在Al之上的铂约为2.6的最大蚀刻选择性，在ZnO之上的铂约为2.1的最大蚀刻选择性。CF ₄铝掩膜层的/ Ar ICP蚀刻似乎是制造包含厚铂结构层的MEMS器件的非常有吸引力的工具。