CdS nanoparticles have been prepared by a chemical method and deposited as a thin film on both P-type silicon and porous silicon (PS) substrates by spin coating technique as a photoconductive detector. The Hall measurements show that the nanoparticles are n-type with carrier concentration of about (− 5.45 × 10¹⁰ cm⁻³). The response time of the fabricated detectors on Si, PS and (CdS + TPD/PS) substrates was measured (by illuminating the sample with Halogen lamp 250 W) and its values are 5.2 ms, 2.1 ms and 1.3 ms, respectively. The specific detectivity and photoresponsivity of the fabricated detector on PS are found to be (9.9 × 10¹² Watt⁻¹ Hz^1/2 cm⁻¹ and 0.043 A/W). The surface functionalization of the CdS nanoparticles film deposited on porous silicon (PS) substrate by triphenyldiamine (TPD) has highly improved the photoresponsivity and response time of the detector to 0.059 A/W and 1.3 ms.

中文翻译：

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通过添加TPD导电聚合物增强CdS纳米颗粒的光电导检测器

CdS纳米粒子已通过化学方法制备，并通过旋涂技术作为光电导检测器以薄膜形式沉积在P型硅和多孔硅（PS）基板上。霍尔测量结果表明，纳米颗粒为n型，载流子浓度约为（-5.45×10 ¹⁰  cm ^-3）。测量了在Si，PS和（CdS + TPD / PS）基板上制造的检测器的响应时间（通过用250 W卤素灯照射样品），其响应时间分别为5.2 ms，2.1 ms和1.3 ms。发现在PS上制造的探测器的比探测率和光响应率为（9.9×10 ¹² 瓦特^-1  Hz ^1/2  cm ^-1和0.043 A / W）。三苯二胺（TPD）沉积在多孔硅（PS）衬底上的CdS纳米颗粒薄膜的表面功能化将检测器的光响应性和响应时间大大提高到0.059 A / W和1.3 ms。