Ion-beam assisted deposition (IBAD) for Cr/Cu coatings was investigated. For high density and electric resistivity, IBAD was found to be an appropriate method. The density was increased from 8.60 g/cm³ to 8.85 g/cm³, depending on IBAD conditions, and the resistivity was increased from 6.4 μΩ·cm to 7.2 μΩ·cm. It is also suggested that the crystallographic orientations of polycrystalline Cu surfaces were able to be aligned to (111) planes by the IBAD process.

中文翻译：

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离子束辅助沉积对Cr / Cu电阻率和晶体结构的影响

研究了Cr / Cu涂层的离子束辅助沉积（IBAD）。对于高密度和高电阻率，发现IBAD是合适的方法。取决于IBAD条件，密度从8.60g / cm ³增加到8.85g / cm ³，并且电阻率从6.4μΩ·cm增加到7.2μΩ·cm。还建议通过IBAD工艺，多晶Cu表面的晶体学取向能够与（111）平面对准。