A new Zener transient voltage suppressor (TVS) consisting of abrupt junctions of epitaxial layers has been developed. Differential resistance in the breakdown region is obtained as low as 5Ω, and the reverse leakage current is substantially suppressed by one to two orders of magnitude compared to a conventional Zener diode. The reliability of the TVS is confirmed based on its maximum allowed reverse current level and the robustness of its electrostatic discharge endurance against ±8 kV of the human body model (HBM) at a wide range of operating temperatures (30°C to 180°C). This significant improvement is primarily attributed to the abrupt junction profile formed by low-temperature processes, followed by epitaxial growth technology prohibiting redistribution of dopant elements.

已经开发出一种新的由外延层的突变结组成的齐纳瞬态电压抑制器（TVS）。击穿区域的差分电阻低至5Ω，与传统的齐纳二极管相比，反向泄漏电流被抑制了1-2个数量级。TVS的可靠性是基于其最大允许反向电流水平以及其在广泛的工作温度范围（30°C至180°C）下对人体模型（HBM）的±8 kV静电放电耐受性的耐用性而确定的）。这种显着改善主要归因于低温工艺形成的突变结轮廓，其后是外延生长技术，禁止掺杂元素的重新分布。