Polycrystalline silicon thin-film transistors fabricated by metal induced lateral crystallization (MILC) have been demonstrated as promising devices for realizing electronics on large area, inexpensive glass substrates. However, it takes a relatively long time to crystallize amorphous silicon thin films. In this work, we proposed a new crystallization method using copper and nickel metals together and proved that this method could be used to fabricate thin-film transistors. It turned out that a four times faster crystallization rate could be obtained and that device performance was similar to conventional nickel MILC TFTs. This means that the proposed crystallization method is quite acceptable for practical use.

通过金属诱导的横向结晶（MILC）制造的多晶硅薄膜晶体管已被证明是在大面积，廉价玻璃基板上实现电子技术的有前途的器件。然而，结晶非晶硅薄膜需要相对较长的时间。在这项工作中，我们提出了一种同时使用铜和镍金属的新结晶方法，并证明了该方法可用于制造薄膜晶体管。事实证明，可以获得快四倍的结晶速率，并且器件性能与传统的镍MILC TFT相似。这意味着所提出的结晶方法对于实际使用是完全可以接受的。