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Characterization of ZnO-Cu 2 O crystal films by electrochemical codeposition
Journal of Solid State Electrochemistry ( IF 2.6 ) Pub Date : 2019-11-06 , DOI: 10.1007/s10008-019-04411-5
Leo Chau-Kuang Liau , Ping-Wei Kuo

Codeposition of mixed ZnO and Cu2O (ZnO-Cu2O) crystal films using electrochemical deposition (ECD) was investigated. The ZnO-Cu2O films were prepared using different ratios of Zn2+ and Cu2+ in precursor solutions and at various ECD periods and potential settings. The properties of the ECD films, such as crystal composition, morphology, and light absorption, were analyzed. Results showed that the properties of the fabricated films were affected by the potential setting, metal ion ratio, and deposition period in the ECD process. The potential required to fabricate ZnO film was lowered negatively from − 1 V without Cu2+ to − 0.4 V with the presence of Cu2+ in the ECD solution. The presence of Cu2+ was determined to be the major factor affecting the shape of ZnO particles formed, which varied from rod-like to spherical. The crystal composition of the ECD films involved Cu2O and Cu without ZnO using a low ratio of Zn2+ in the precursor at − 0.4 V. ZnO and Cu2O crystals appeared in the film at − 0.4 V with a high ratio of Zn2+ in the precursor. The composition of ZnO, Cu2O, and Cu in the ECD films was the major factor to influence the light absorption patterns of the films. The codeposition steps of ZnO-Cu2O films were elucidated from the results.



中文翻译:

电化学共沉积法表征ZnO-Cu 2 O晶体膜

研究了使用电化学沉积(ECD)的ZnO和Cu 2 O(ZnO-Cu 2 O)混合晶体膜的共沉积。ZnO-Cu 2 O膜是使用前驱体溶液中不同比例的Zn 2+和Cu 2+以及不同的ECD周期和电势设置制备的。分析了ECD膜的特性,例如晶体组成,形态和光吸收。结果表明,在ECD工艺中,制备膜的性能受到电势设置,金属离子比和沉积时间的影响。制造ZnO薄膜所需的电势从无Cu 2+时的− 1 V降低到有Cu 2+存在时的− 0.4 V在ECD解决方案中。确定了Cu 2+的存在是影响形成的ZnO颗粒形状的主要因素,ZnO颗粒的形状从棒状到球形。ECD膜的晶体组成涉及Cu 2 O和不含ZnO的Cu,在-0.4 V时前驱体中Zn 2+的比例低。ZnO和Cu 2 O晶体在-0.4 V时以-0.4 V的高比例出现在膜中。前体中的Zn 2+。ECD膜中ZnO,Cu 2 O和Cu的组成是影响膜的光吸收图案的主要因素。结果阐明了ZnO-Cu 2 O薄膜的共沉积步骤。

更新日期:2019-11-06
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