In this study, based on three-dimensional (3D) framework architecture built-up with two-dimensional (2D) graphitic carbon such as graphene, we have prepared a mechanically robust polymer composite without exhibiting notable deterioration of electrical conductivity under mechanical deformation. In constructing 3D framework comprising of graphitic carbons, two sophisticated methodologies, direct formation of graphitic layers on metal foam by chemical vapor deposition (CVD), and lay-up of reduced graphene oxide (rGO) nanosheets on metal foam have been performed, respectively, and their sustainability of conductive performance under mechanical deformation has been comparatively examined in terms of electrical conductivity change by cyclic mechanical stress. The CVD-synthesized graphene (CGr) framework-embedded PDMS composite, which means a PDMS composite containing 3D graphene framework grown by CVD process, exhibited electrical conductivity of ∼5 S/m at graphene content of 1.0 wt%, which was ∼5 orders of magnitude higher than that of 3D rGO framework-embedded PDMS composite containing comparable loading of rGO. When subjected to repetitive mechanical stress, it was found that the superior conductivity performance of CGr framework over rGO framework was well retained, presumably due to the higher perfectness of graphitic layers, which would impart much longer electron transfer to the framework architecture of graphitic carbon nanosheets.

中文翻译：

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石墨碳纳米片的三维框架结构对提高机械变形下电导率的意义

在这项研究中，基于以二维（2D）石墨碳（例如石墨烯）构建的三维（3D）框架结构，我们制备了一种机械坚固的聚合物复合材料，在机械变形下导电性没有明显下降。在构建包含石墨碳的3D框架时，分别执行了两种复杂的方法，即通过化学气相沉积（CVD）在金属泡沫上直接形成石墨层，以及在金属泡沫上沉积还原型氧化石墨烯（rGO）纳米片。并通过循环机械应力的电导率变化比较了它们在机械变形下的导电性能的可持续性。CVD合成的石墨烯（CGr）框架嵌入的PDMS复合材料，这意味着含有通过CVD工艺生长的3D石墨烯骨架的PDMS复合材料在石墨烯含量为1.0 wt％时显示出约5 S / m的电导率，比含3D rGO骨架的PDMS复合材料的电导率高约5个数量级。 rGO的可比负载。当受到重复的机械应力时，发现CGr构架优于rGO构架的导电性能得以很好地保留，这大概是由于石墨层的更高的完整性，这将使更长的电子转移到石墨碳纳米片的构架上。它比包含rGO可比负载的3D rGO框架嵌入式PDMS复合材料高出约5个数量级。当受到重复的机械应力时，发现CGr构架优于rGO构架的导电性能得以很好地保留，这大概是由于石墨层的更高的完整性，这将使更长的电子转移到石墨碳纳米片的构架上。它比包含rGO可比负载的3D rGO框架嵌入式PDMS复合材料高出约5个数量级。当受到重复的机械应力时，发现CGr构架优于rGO构架的导电性能得以很好地保留，这大概是由于石墨层的更高的完整性，这将使更长的电子转移到石墨碳纳米片的构架上。