当前位置: X-MOL 学术Silicon › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Fabrication of High Responsivity for MgO NPs/PSi Heterojunction Device by Sol-Gel Technique
Silicon ( IF 2.8 ) Pub Date : 2019-06-13 , DOI: 10.1007/s12633-019-00188-4
Aseel M. Abdul Majeed , Itab F. Hussein , Rana O. Abd Al-Jalil

In this work, porous silicon was preparation by electrochemical etching and the MgO thin film by sol-gel technique. The structural properties of MgO NPs were studied using XRD and the morphology properties by field emission scanning electron microscopy. The electrical properties; spectral responsivity, detectivity of the photodetector were measured. The Spectral responsivity of MgO/p-PSi/Si photodector was found to be around 0.39 at 550 nm and 0.56 A/W at 800 nm and the specific detectivity of MgO/Psi/Si was found to be 6*1010 W−1 cm Hz1/2. The photodetector shows a photovoltaic behavior with a maximum Voc. of 0.25 V and ISc. of 7.6*10−3 A.

中文翻译:

Sol-Gel法制备高响应性的MgO NPs / PSi异质结器件

在这项工作中,通过电化学刻蚀制备多孔硅,并通过溶胶-凝胶技术制备MgO薄膜。用XRD研究了MgO NPs的结构特性,并用场发射扫描电子显微镜研究了其形态学特性。电性能;光谱响应度,光电检测器的检测度被测量。发现MgO / p-PSi / Si光电探测器的光谱响应度在550 nm处约为0.39,在800 nm处约为0.56 A / W,并且MgO / Psi / Si的比探测率为6 * 10 10  W -1 厘米赫兹1/2。光电探测器显示具有最大Voc的光伏行为。0.25 V和I Sc。7.6 * 10 -3 A.
更新日期:2019-06-13
down
wechat
bug