In this work, porous silicon was preparation by electrochemical etching and the MgO thin film by sol-gel technique. The structural properties of MgO NPs were studied using XRD and the morphology properties by field emission scanning electron microscopy. The electrical properties; spectral responsivity, detectivity of the photodetector were measured. The Spectral responsivity of MgO/p-PSi/Si photodector was found to be around 0.39 at 550 nm and 0.56 A/W at 800 nm and the specific detectivity of MgO/Psi/Si was found to be 6*10¹⁰ W⁻¹ cm Hz^1/2. The photodetector shows a photovoltaic behavior with a maximum Voc. of 0.25 V and I_Sc. of 7.6*10⁻³ A.

中文翻译：

---

Sol-Gel法制备高响应性的MgO NPs / PSi异质结器件

在这项工作中，通过电化学刻蚀制备多孔硅，并通过溶胶-凝胶技术制备MgO薄膜。用XRD研究了MgO NPs的结构特性，并用场发射扫描电子显微镜研究了其形态学特性。电性能；光谱响应度，光电检测器的检测度被测量。发现MgO / p-PSi / Si光电探测器的光谱响应度在550 nm处约为0.39，在800 nm处约为0.56 A / W，并且MgO / Psi / Si的比探测率为6 * 10 ¹⁰  W ^-1 厘米赫兹^1/2。光电探测器显示具有最大Voc的光伏行为。0.25 V和I _Sc。7.6 * 10 ^-3 A.