Cu₂ZnSnS₄ (CZTS) thin films were deposited from a single cationic bath by Successive Ionic Layer Adsorption and Reaction (SILAR) method. Regular SILAR route for CZTS had the drawback of preferential adsorption of copper and tin cations in comparison with zinc. This resulted in Cu₃SnS₄ (CTS) and Cu₂S phases rather than phase pure CZTS films. A modified SILAR route, with a separate bath for Zn²⁺ ions, circumvented the difficulty and hence led to phase pure CZTS thin films. UV–visible absorption spectra of the CZTS thin films showed absorption coefficients of ~ 10⁴ cm⁻¹ and a band gap of 1.5 eV. Combined van der Pauw and Hall measurements of CZTS thin films showed a resistivity of approximately 1.51 × 10² Ωcm, carrier density of ~ 1.28 × 10¹⁷ cm⁻³, and mobility ~ 0.32 cm² V⁻¹s⁻¹. A completely solution processed P–N junction was fabricated and characterized by forming glass/FTO/TiO₂/CdS/CZTS multilayer.

中文翻译：

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通过SILAR方法向具有Zn吸附增强的相纯CZTS薄膜迈进光伏应用

通过连续离子层吸附和反应（SILAR）方法从单个阳离子浴中沉积Cu ₂ ZnSnS ₄（CZTS）薄膜。CZTS的常规SILAR路线与锌相比，具有铜和锡阳离子优先吸附的缺点。这导致形成Cu ₃ SnS ₄（CTS）和Cu ₂ S相，而不是纯CZTS膜。改进的SILAR路线，带有一个单独的Zn ²⁺离子浴，解决了这一难题，因此导致了相纯CZTS薄膜的产生。CZTS薄膜的紫外可见吸收光谱显示约10 ⁴ cm ^-1的吸收系数带隙为1.5 eV。合并的范德瓦CZTS薄膜Pauw的和霍尔测量表明约1.51×10的电阻率² Ωcm时，的〜1.28×10载流子密度¹⁷厘米^-3，和移动性〜0.32厘米² V ^-1小号^-1。通过形成玻璃/ FTO / TiO ₂ / CdS / CZTS多层膜，可以对经过完全溶液处理的P–N结进行制造和表征。