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A high gain and high bandwidth three stage amplifier using FGMOS and 0.5 V dual supply
Analog Integrated Circuits and Signal Processing ( IF 1.2 ) Pub Date : 2020-02-04 , DOI: 10.1007/s10470-020-01596-y
Urvashi Bansal , Pranjal Gupta , Rachit Tayal

A novel CMOS transistor implementation of three stage amplifier is presented in this work. The floating gate metal oxide semiconductor (FGMOS) transistor current mirror is exploited here to minimize supply requirements and to overcome the bandwidth reduction due to FGMOS transistor, frequency compensation techniques have been applied in subsequent stages. This amplifier is useful for application of low-voltage low-power VLSI as it requires a dual supply of only ± 0.5 V. The power consumption is 0.157 mW and slew rate is 6.5 V/μs. The gain bandwidth product of the circuit is calculated as 59.1 MHz and dc gain is 111.5 dB. All simulations are carried out in 180 nm technology with spice tools.



中文翻译:

使用FGMOS和0.5 V双电源的高增益,高带宽三级放大器

这项工作提出了一种新颖的三级放大器CMOS晶体管实现。此处利用浮栅金属氧化物半导体(FGMOS)晶体管电流镜来最小化电源需求并克服由于FGMOS晶体管引起的带宽降低,已在后续阶段中应用了频率补偿技术。该放大器对于低压低功耗VLSI的应用非常有用,因为它仅需要±0.5 V的双电源。功耗为0.157 mW,转换速率为6.5 V /μs。电路的增益带宽乘积计算为59.1 MHz,直流增益为111.5 dB。所有仿真均使用香料工具在180 nm技术中进行。

更新日期:2020-02-04
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