Abstract

Thin film Au–SiC–Cu and Au–SiC–Pt crossbar structures of 40μmx40μm size where all three layers are 100 nm thickness were fabricated by lithography. Decomposition of the SiC film is observed under the influence of an electric field (10⁴–10⁶ V/cm) applied between the Au bottom electrode and the top metal electrode (Cu or Pt) for a few cycles during the course of testing as a resistive switching structure. This is evidenced using Raman mapping and Raman spectroscopy techniques. The Raman spectra reveal peaks corresponding to the D and G bands of nanocrystalline graphite. Raman mapping at different locations indicates that most of the graphite forms at the interface between the metal electrode and SiC. Raman mapping images reveal the formation of graphite on the surface. This technique is simple and enables site-selective localized growth of nanocrystalline graphite which is expected to impact many nanoscale applications. It could also be extended to form graphene at the nanoscale.

Graphic Abstract

中文翻译：

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电场诱导的SiC薄膜解离导致纳米晶石墨的形成

摘要

通过光刻工艺制造了尺寸为40μmx40μm的薄膜Au–SiC–Cu和Au–SiC–Pt交叉结构，其中所有三层厚度均为100 nm。在电场的影响下观察到SiC膜的分解（10 ⁴ –10 ⁶ 在测试过程中，作为电阻开关结构，在Au底部电极和顶部金属电极（Cu或Pt）之间施加了V / cm）（V / cm）几个周期。使用拉曼映射和拉曼光谱技术证明了这一点。拉曼光谱揭示出对应于纳米晶石墨的D和G带的峰。拉曼映射在不同位置表明大多数石墨在金属电极和SiC之间的界面处形成。拉曼作图图像揭示了表面上石墨的形成。该技术很简单，可以实现纳米晶体石墨的定点局部生长，这有望影响许多纳米级应用。它也可以扩展形成纳米级的石墨烯。

图形摘要