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Interface analysis of Ag/n‐type Si contacts in n‐type PERT solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-02-03 , DOI: 10.1002/pip.3242 Pablo Ferrada 1 , Dominik Rudolph 2 , Carlos Portillo 1 , Adrian Adrian 2 , Jonathan Correa‐Puerta 3 , Rodrigo Sierpe 4 , Valeria Campo 3 , Marcos Flores 5 , Tomas P. Corrales 3 , Ricardo Henríquez 3 , Marcelo J. Kogan 4, 6 , Jan Lossen 2
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-02-03 , DOI: 10.1002/pip.3242 Pablo Ferrada 1 , Dominik Rudolph 2 , Carlos Portillo 1 , Adrian Adrian 2 , Jonathan Correa‐Puerta 3 , Rodrigo Sierpe 4 , Valeria Campo 3 , Marcos Flores 5 , Tomas P. Corrales 3 , Ricardo Henríquez 3 , Marcelo J. Kogan 4, 6 , Jan Lossen 2
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To increase efficiencies of bifacial solar cells, emitter, back surface field (BSF), and metal patterns must be optimized. We study the influence of paste volume, through multiple prints, of two silver pastes on the contact formation at the rear side of n‐type passivated emitter and rear totally diffused (n‐PERT) solar cells with two BSF doping profiles. Differences in fingers' electrical properties were found between pastes. Contact resistivity shows a relative difference of 27.6%, partially explained by changes in the silver crystallites formation at the Ag/Si interface and in the crystallites' penetration depth. Variations in crystallites formation and penetration between pastes can reach 38.4% and 48.8%, respectively. Line resistance shows a difference between pastes, appearing as the main cause of an absolute efficiency difference of 2.9%. Fingers' structural and electrical properties are modified by increasing the paste volume. Microstructure analysis reveals that additional metallic printing does not only increase line cross sectional area but also increases the formation of silver crystallites, which can reach a relative increment of 23.9% between first and second prints. Further printing does not necessarily decrease contact resistivity, but reduces line resistance in up to 94.9%, which results in an absolute efficiency increase of 2.2%. In addition, the higher presence of silver oxide in the finger is related to a higher efficiency in the formation of silver crystallites. Finally, BSF doping has an influence in the open circuit voltage, short circuit current density, and contact resistivity, with differences that can reach 8.7 mV, 0.2 mA/cm2, and 6.1 mΩcm2, respectively, depending on paste and number of prints.
中文翻译：
n型PERT太阳能电池中Ag / n型Si触点的界面分析
为了提高双面太阳能电池的效率，必须优化发射器，背面场（BSF）和金属图案。我们通过多次印刷研究了两种银浆的糊剂体积对n型钝化发射极和具有两个BSF掺杂分布的背面全扩散（n-PERT）太阳能电池背面的接触形成的影响。发现糊剂之间的手指电性能有所不同。接触电阻率显示出27.6％的相对差异，部分原因是Ag / Si界面处的银微晶形成和微晶穿透深度的变化。锡膏之间的微晶形成和渗透率的变化分别可以达到38.4％和48.8％。线电阻显示出糊剂之间的差异，绝对效率差异为2.9％的主要原因。手指的结构和电学特性可通过增加糊的量来改变。微观结构分析表明，附加的金属印刷不仅增加了线的横截面积，而且增加了银微晶的形成，这在第一次印刷和第二次印刷之间可以达到23.9％的相对增量。进一步印刷不一定会降低接触电阻率，但会降低线电阻达94.9％，从而导致绝对效率提高2.2％。另外，手指中氧化银的较高存在与银微晶形成的较高效率有关。最后，BSF掺杂会影响开路电压，短路电流密度和接触电阻率，2，和6.1mΩcm 2分别取决于膏和打印数量。
更新日期：2020-02-03
中文翻译：
n型PERT太阳能电池中Ag / n型Si触点的界面分析
为了提高双面太阳能电池的效率，必须优化发射器，背面场（BSF）和金属图案。我们通过多次印刷研究了两种银浆的糊剂体积对n型钝化发射极和具有两个BSF掺杂分布的背面全扩散（n-PERT）太阳能电池背面的接触形成的影响。发现糊剂之间的手指电性能有所不同。接触电阻率显示出27.6％的相对差异，部分原因是Ag / Si界面处的银微晶形成和微晶穿透深度的变化。锡膏之间的微晶形成和渗透率的变化分别可以达到38.4％和48.8％。线电阻显示出糊剂之间的差异，绝对效率差异为2.9％的主要原因。手指的结构和电学特性可通过增加糊的量来改变。微观结构分析表明，附加的金属印刷不仅增加了线的横截面积，而且增加了银微晶的形成，这在第一次印刷和第二次印刷之间可以达到23.9％的相对增量。进一步印刷不一定会降低接触电阻率，但会降低线电阻达94.9％，从而导致绝对效率提高2.2％。另外，手指中氧化银的较高存在与银微晶形成的较高效率有关。最后，BSF掺杂会影响开路电压，短路电流密度和接触电阻率，2，和6.1mΩcm 2分别取决于膏和打印数量。
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