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Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications
Journal of Industrial and Engineering Chemistry ( IF 5.9 ) Pub Date : 2020-05-01 , DOI: 10.1016/j.jiec.2020.01.031
Cheulhwan Kim , Jae Young Kim , Kanghuck Lee , Sun Young Jung , Dong-Jin Yun , Tae Kyu An , Hwa Sung Lee , Yong Jin Jeong , Jihoon Lee

Abstract In this study, a new functional thiol with a pentafluorophenyl group was synthesized for the surface modification of CdSe quantum-dot floating layers; this was aimed at the fabrication of organic field-effect transistors (OFETs). The dipole moments and surface properties of the fluorinated thiols were used to control the transistor operations; these thiols acted as surface modifiers of the CdSe quantum-dot floating layers in the OFETs. Further, the new functional thiol exhibited a larger dipole moment than that of the commercial 2,3,4,5,6-pentafluorothiophenol. The OFET comprising the new functional thiol with the pentafluorophenyl group functioned as a normally ON transistor and exhibited bistable current states during nondestructive reading. In addition, it exhibited sensitive responses to electrical-only and light-only biases, which demonstrates its feasibility for light-responsive flash memory applications.

中文翻译:

使用具有大偶极矩的新型硫醇进行表面改性的量子点浮层,以提高光可擦除有机晶体管存储器应用的可行性

摘要 本研究合成了一种具有五氟苯基的新型功能硫醇,用于CdSe量子点浮层的表面改性;这旨在制造有机场效应晶体管(OFET)。氟化硫醇的偶极矩和表面性质用于控制晶体管的操作;这些硫醇充当 OFET 中 CdSe 量子点浮动层的表面改性剂。此外,新的功能硫醇表现出比商业 2,3,4,5,6-五氟苯硫酚更大的偶极矩。包含具有五氟苯基的新型功能性硫醇的 OFET 用作常开晶体管,并在无损读取过程中表现出双稳态电流状态。此外,它对纯电和纯光偏差表现出敏感的反应,
更新日期:2020-05-01
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