We demonstrate 5 dB net gain in an erbium-doped tellurium-oxide-coated silicon nitride waveguide. The amplifier design leverages the high refractive index and high gain in erbium-doped tellurite glass as well as the ultra-low losses and mature, reliable, and low-cost fabrication methods of silicon nitride waveguide technology. We show that the waveguide platform demonstrates low background propagation losses of 0.25 dB/cm based on a ring resonator device with a Q factor of 1.3×106 at 1640 nm. We measure 5 dB peak net gain at 1558 nm and >3 dB of net gain across the C band in a 6.7 cm long waveguide for 35 mW of launched 1470 nm pump power. Gain per unit length of 1.7 and 1.4 dB/cm is measured in a 2.2 cm long waveguide for 970 and 1470 nm pump wavelengths, respectively. Amplifier simulations predict that >10 dB gain can be achieved across the C band simply by optimizing waveguide length and fiber-chip coupling. These results demonstrate a promising approach for the monolithic integration of compact erbium-doped waveguide amplifiers on silicon nitride chips and within silicon-based photonic integrated circuits.

中文翻译：

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具有 5 dB 净增益的掺铒 TeO2 涂层 Si3N4 波导放大器

我们展示了掺铒氧化碲涂层氮化硅波导的 5 dB 净增益。放大器设计利用了掺铒碲酸盐玻璃的高折射率和高增益，以及氮化硅波导技术的超低损耗和成熟、可靠和低成本的制造方法。我们表明，基于在 1640 nm 处 Q 因子为 1.3×106 的环形谐振器器件，波导平台表现出 0.25 dB/cm 的低背景传播损耗。我们在 6.7 cm 长的波导中测量 1558 nm 处的 5 dB 峰值净增益和大于 3 dB 的 C 波段净增益，用于 35 mW 的发射 1470 nm 泵浦功率。1.7 和 1.4 dB/cm 的单位长度增益分别在 2.2 cm 长的波导中测量，用于 970 和 1470 nm 泵浦波长。放大器仿真预测 > 只需优化波导长度和光纤芯片耦合，即可在 C 波段上实现 10 dB 增益。这些结果证明了一种在氮化硅芯片上和硅基光子集成电路内单片集成紧凑型掺铒波导放大器的有前途的方法。