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Author Correction: Ferroelectric ternary content-addressable memory for one-shot learning
Nature Electronics ( IF 33.7 ) Pub Date : 2020-02-03 , DOI: 10.1038/s41928-020-0374-3
Kai Ni , Xunzhao Yin , Ann Franchesca Laguna , Siddharth Joshi , Stefan Dünkel , Martin Trentzsch , Johannes Müller , Sven Beyer , Michael Niemier , Xiaobo Sharon Hu , Suman Datta

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

中文翻译:

作者更正:用于单次学习的铁电三元内容可寻址存储器

该文件的修订版已经发布,可以通过文件顶部的链接进行访问。
更新日期:2020-02-03
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