The quantum anomalous Hall (QAH) effect is a consequence of non-zero Berry curvature in momentum space. The QAH insulator harbours dissipation-free chiral edge states in the absence of an external magnetic field. However, the topological Hall (TH) effect, a hallmark of chiral spin textures, is a consequence of real-space Berry curvature. Here, by inserting a topological insulator (TI) layer between two magnetic TI layers, we realized the concurrence of the TH effect and the QAH effect through electric-field gating. The TH effect is probed by bulk carriers, whereas the QAH effect is characterized by chiral edge states. The appearance of the TH effect in the QAH insulating regime is a consequence of chiral magnetic domain walls that result from the gate-induced Dzyaloshinskii–Moriya interaction and occurs during the magnetization reversal process in the magnetic TI sandwich samples. The coexistence of chiral edge states and chiral spin textures provides a platform for proof-of-concept dissipationless spin-textured spintronic applications.

量子反常霍尔 (QAH) 效应是动量空间中非零贝里曲率的结果。在没有外部磁场的情况下，QAH 绝缘体具有无耗散的手征边缘状态。然而，拓扑霍尔 (TH) 效应是手性自旋纹理的标志，是实空间贝里曲率的结果。在这里，通过在两个磁性 TI 层之间插入拓扑绝缘体 (TI) 层，我们通过电场门控实现了 TH 效应和 QAH 效应的同时存在。TH 效应由散装载体探测，而 QAH 效应的特征在于手性边缘态。QAH 绝缘状态中 TH 效应的出现是手性磁畴壁的结果，该磁畴壁是由栅极诱导的 Dzyaloshinskii-Moriya 相互作用产生的，并且发生在磁性 TI 夹层样品的磁化反转过程中。手征边缘态和手征自旋纹理的共存为概念验证无耗散自旋纹理自旋电子学应用提供了平台。