Abstract Rare-earth based lasing action in GaN semiconductor at the telecommunication wavelength of 1.5 μm has been demonstrated at room temperature. We have reported the stimulated emission under the above bandgap excitation from Er doped GaN epilayers prepared by metal-organic chemical vapor deposition. Using the variable stripe technique, the observation of the stimulated emission has been demonstrated through characteristic features of threshold behavior of emission intensity as functions of pump intensity, excitation length, and spectral linewidth narrowing. Using the variable stripe setup, the optical gain up to 75 cm−1 has been obtained in the GaN:Er epilayers. The near infrared lasing from GaN semiconductor opens up new possibilities for extended functionalities and integration capabilities for optoelectronic devices.

中文翻译：

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观察掺铒 GaN 外延层中的光学增益

摘要 GaN 半导体中在 1.5 μm 电信波长下的稀土基激光作用已在室温下得到证实。我们已经报道了通过金属有机化学气相沉积制备的 Er 掺杂 GaN 外延层在上述带隙激发下的受激发射。使用可变条纹技术，已通过作为泵浦强度、激发长度和光谱线宽变窄函数的发射强度阈值行为的特征特征证明了受激发射的观察。使用可变条纹设置，在 GaN:Er 外延层中获得了高达 75 cm-1 的光学增益。来自 GaN 半导体的近红外激光为光电器件的扩展功能和集成能力开辟了新的可能性。