Enhanced Thermoelectric Performance in N‐Type Mg3.2Sb1.5Bi0.5 by La or Ce Doping into Mg,Advanced Electronic Materials

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Enhanced Thermoelectric Performance in N‐Type Mg3.2Sb1.5Bi0.5 by La or Ce Doping into Mg
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-02-03 , DOI: 10.1002/aelm.201901391
Fan Zhang ₁ , Chen Chen ₁ , Shan Li _{1,

2} , Li Yin ₁ , Bo Yu ₃ , Jiehe Sui ₄ , Feng Cao ₅ , Xingjun Liu _{1,

4} , Zhifeng Ren ₂ , Qian Zhang ₁

Affiliation

N‐type Mg_3.2Sb_1.5Bi_0.5 materials are prepared by cation‐site doping with lanthanides (La, Ce). Both La‐ and Ce‐doped samples exhibit a higher doping limit and greater efficiency than those of chalcogen (Te, Se, S)‐doped n‐type Mg_3.2Sb_1.5Bi_0.5 samples. High electron carrier concentration ≈9 × 10¹⁹ cm⁻³ is obtained in Mg_3.18La_0.02Sb_1.5Bi_0.5 and Mg_3.185Ce_0.015Sb_1.5Bi_0.5, which is close to the theoretical doping‐concentration limit and induces contributions from more electron bands. A higher electrical conductivity was thus obtained and is beneficial to the enhanced ZT values for lanthanide‐doped Mg_3.2Sb_1.5Bi_0.5. The highest ZT value ≈1.6 is achieved in Mg_3.19La_0.01Sb_1.5Bi_0.5 at 693 K, along with a ZT ≈1.50 in Mg_3.19Ce_0.01Sb_1.5Bi_0.5 at 693 K, indicating that lanthanides provide a promising doping strategy for Mg_3.2Sb_1.5Bi_0.5‐based materials.

中文翻译：

La或Ce掺杂到Mg中增强了N型Mg3.2Sb1.5Bi0.5的热电性能

N型Mg _3.2 Sb _1.5 Bi _0.5材料是通过用镧系元素（La，Ce）进行阳离子位点掺杂而制备的。La和Ce掺杂的样品都比硫族元素（Te，Se，S）掺杂的n型Mg _3.2 Sb _1.5 Bi _0.5样品具有更高的掺杂极限和更高的效率。在Mg _3.18 La _0.02 Sb _1.5 Bi _0.5和Mg _3.185 Ce _0.015 Sb _1.5 Bi _0.5中获得高的电子载流子浓度≈9×10 ¹⁹ cm ^-3，这接近理论掺杂浓度极限，并引起更多电子带的贡献。因此获得了更高的电导率，并且有利于镧系元素掺杂的Mg _3.2 Sb _1.5 Bi _0.5的ZT值的提高。最高ZT值≈1.6以mg实现_3.19的La _0.01锑_1.5的Bi _0.5在693 K的一个，沿ZT ≈1.50中的Mg _3.19铈_0.01锑_1.5的Bi _0.5在693 K，这表明镧系元素为Mg的一个有前途的策略掺杂_3.2锑_1.5 Bi _0.5基材料。

更新日期：2020-03-09

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