Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure,Advanced Electronic Materials

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Tunable Electronic Properties and Potential Applications of 2D GeP/Graphene van der Waals Heterostructure
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-02-03 , DOI: 10.1002/aelm.201901024
Hui Zeng _{1,

2} , Ru‐Shan Chen ₁ , Ge Yao ₃

Affiliation

Heterostructure of various 2D semiconductors have attracted extensive attention due to their tunable electronic properties and tremendous application potential. Using first‐principles calculations, the electronic properties of a GeP/graphene van der Waals heterostructure are studied and the physical mechanism of its properties modulated by strain and electric field are examined. The calculations reveal that not only the electronic properties of the GeP/Graphene heterostructure, but also the position of the graphene's Dirac cone, can be modulated by uniaxial strain. Interestingly, uniaxial strain can induce p‐type to n‐type Schottky contact transition and its band alignment allows photocatalytic water splitting. The band edges of the GeP relative to that of graphene are effectively modulated by transverse electric field. These findings provide comprehensive understanding of fundamental properties of the GeP/graphene heterostructure and its tunable electronic properties through strain engineering and electric fields, which will be helpful to the application of 2D GeP‐based nanodevices.

中文翻译：

2D GeP /石墨烯范德华异质结构的可调电子性质及其潜在应用

各种2D半导体的异质结构因其可调节的电子特性和巨大的应用潜力而受到广泛关注。使用第一性原理计算，研究了GeP /石墨烯范德华异质结构的电子性质，并研究了其性质受应变和电场调制的物理机理。计算表明，不仅GeP /石墨烯异质结构的电子性质，而且石墨烯的狄拉克锥的位置都可以通过单轴应变来调节。有趣的是，单轴应变可以引起p型到n型肖特基接触跃迁，其能带排列允许光催化水分解。GeP相对于石墨烯的能带边缘可通过横向电场有效地调制。

更新日期：2020-03-09

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