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Robust High‐Capacitance Polymer Gate Dielectrics for Stable Low‐Voltage Organic Field‐Effect Transistor Sensors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-02-03 , DOI: 10.1002/aelm.201901127 Aiman Rahmanudin 1 , Daniel J. Tate 1 , Raymundo Marcial‐Hernandez 1 , Nicholas Bull 1 , Suresh K. Garlapati 2 , Adibah Zamhuri 1 , Raja U. Khan 1 , Sheida Faraji 3 , Sankara R. Gollu 1 , Krishna. C. Persaud 2 , Michael L. Turner 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-02-03 , DOI: 10.1002/aelm.201901127 Aiman Rahmanudin 1 , Daniel J. Tate 1 , Raymundo Marcial‐Hernandez 1 , Nicholas Bull 1 , Suresh K. Garlapati 2 , Adibah Zamhuri 1 , Raja U. Khan 1 , Sheida Faraji 3 , Sankara R. Gollu 1 , Krishna. C. Persaud 2 , Michael L. Turner 1
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Organic field‐effect transistors (OFETs) have shown great promise for use as chemical sensors for applications that range from the monitoring of food spoilage to the determination of air quality and the diagnosis of disease. However, for these devices to be truly useful, they must deliver reliable and stable low‐voltage operation over extended timescales. An important element to address this challenge is the development of a high‐capacitance gate dielectric that delivers excellent insulation with robust chemical resistance against the solution processing of organic semiconductors (OSC). The development of a bilayer gate dielectric containing a high‐k fluoropolymer relaxor ferroelectric layer modified at the OSC/dielectric interface with a photo‐crosslinked chemically resistant low‐k methacrylate‐based copolymer buffer layer is reported. Bottom‐gate OFET chemical sensors using this bilayer dielectric operate at low‐voltage with exceptional operational stability. They deliver reliable sensing performance over multiple cycles of ammonia exposure (2 to 50 ppm) with an estimated limit‐of‐detection below 1 ppm.
中文翻译：
用于稳定的低压有机场效应晶体管传感器的坚固耐用的高电容聚合物栅极电介质
有机场效应晶体管（OFET）具有广阔的前景，可以用作化学传感器，其应用范围从食品变质的监测到空气质量的确定和疾病的诊断。但是，要使这些设备真正有用，它们必须在延长的时间范围内提供可靠且稳定的低压运行。解决这一挑战的一个重要因素是开发一种高电容栅极电介质，该电介质可提供出色的绝缘性以及对有机半导体（OSC）的固溶处理具有强大的耐化学腐蚀性。双层栅极电介质的开发，该介质包含在OSC /电介质界面处改性的具有高k含氟聚合物弛豫铁电层和光交联的耐化学性低k报告了基于甲基丙烯酸酯的共聚物缓冲层。使用这种双层电介质的底栅OFET化学传感器在低压下具有出色的运行稳定性。它们在氨暴露的多个周期（2至50 ppm）中提供可靠的传感性能，估计检测极限低于1 ppm。
更新日期：2020-03-09
中文翻译：
用于稳定的低压有机场效应晶体管传感器的坚固耐用的高电容聚合物栅极电介质
有机场效应晶体管（OFET）具有广阔的前景，可以用作化学传感器，其应用范围从食品变质的监测到空气质量的确定和疾病的诊断。但是，要使这些设备真正有用，它们必须在延长的时间范围内提供可靠且稳定的低压运行。解决这一挑战的一个重要因素是开发一种高电容栅极电介质，该电介质可提供出色的绝缘性以及对有机半导体（OSC）的固溶处理具有强大的耐化学腐蚀性。双层栅极电介质的开发，该介质包含在OSC /电介质界面处改性的具有高k含氟聚合物弛豫铁电层和光交联的耐化学性低k报告了基于甲基丙烯酸酯的共聚物缓冲层。使用这种双层电介质的底栅OFET化学传感器在低压下具有出色的运行稳定性。它们在氨暴露的多个周期（2至50 ppm）中提供可靠的传感性能，估计检测极限低于1 ppm。
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