A sneak path current-a current passing through a neighboring memory cell-is an inherent and inevitable problem in a crossbar array consisting of memristor memory cells. This serious problem can be alleviated by serially connecting the selector device to each memristor cell. Among the various types of selector device concepts, the diffusive selector has garnered considerable attention because of its excellent performance. This selector features volatile threshold switching (TS) using the dynamics of active metals such as Ag or Cu, which act as an electrode or dopant in the solid electrolyte. In this study, a diffusive selector based on Ag-doped HfOx is fabricated using a co-sputtering system. As the Ag concentration in the HfOx layer varies, different electrical properties and thereby TS characteristics are observed. The necessity of the electroforming (EF) process for the TS characteristic is determined by the proper Ag concentration in the HfOx layer. This difference in the EF process can significantly affect the parameters of the TS characteristics. Therefore, an optimized doping condition is required for a diffusive selector to attain excellent selector device behavior and avoid an EF process that can eventually degrade device performance.

中文翻译：

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HfOx薄膜中分散的Ag浓度对阈值切换的影响。

在由忆阻器存储单元组成的交叉开关阵列中，潜行电流（流过相邻存储单元的电流）是一个固有且不可避免的问题。通过将选择器设备串行连接到每个忆阻器单元，可以缓解此严重问题。在各种类型的选择器装置概念中，扩散选择器由于其出色的性能而引起了相当大的关注。该选择器具有挥发性阈值切换（TS）功能，可利用活性金属（例如Ag或Cu）的动力学来充当固体电解质中的电极或掺杂剂。在这项研究中，使用共溅射系统制造了基于Ag掺杂的HfOx的扩散选择器。随着HfOx层中Ag浓度的变化，观察到不同的电性能，从而观察到TS特性。TS特性的电铸（EF）工艺的必要性取决于HfOx层中适当的Ag浓度。EF过程中的这种差异会严重影响TS特性的参数。因此，扩散选择器需要优化的掺杂条件，以获得出色的选择器器件性能，并避免可能最终降低器件性能的EF工艺。