Scanning Probe Microscopy of Topological Structure Induced Electronic States of Graphene,Small Methods

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Scanning Probe Microscopy of Topological Structure Induced Electronic States of Graphene
Small Methods ( IF 10.7 ) Pub Date : 2020-01-28 , DOI: 10.1002/smtd.201900683
Shichao Li _{1,

2} , Mengxi Liu ₁ , Xiaohui Qiu _{1,

2}

Affiliation

Graphene, as the first emerging 2D material, has attracted considerable attention because of its remarkable physical properties and potential applications in future electronic devices. Due to its planar structure and monoatomic thickness, graphene is susceptible to the presence of structural and topological defects in lattices, which can have a pronounced influence on the electrical, optical, thermal, and magnetic properties of this carbon allotrope. To unravel the structural disorders at the atomic scale, characterization techniques such as scanning tunneling microscopy (STM) and atomic force microscopy (AFM) have been widely employed. These techniques enable atomically resolved visualization of the lattice imperfection in graphene, as well as a simultaneous interrogation of the electronic states associated with the structural perturbations. This short review highlights the recent advances in the application of STM and AFM for investigating various defects in graphene, including vacancies, substitutional dopants, non‐hexagonal rings, 1D homo‐ and hetero‐boundaries, and stacking misorientation and faults at interlayers. The understanding of the intrinsic properties of structural and topological defects in graphene is essential for developing graphene‐based functional materials and related devices.

中文翻译：

石墨烯拓扑结构诱导电子态的扫描探针显微镜

石墨烯作为第一种新兴的2D材料，由于其卓越的物理性能和在未来电子设备中的潜在应用而备受关注。由于其平面结构和单原子厚度，石墨烯易受晶格中结构和拓扑缺陷的影响，这可能对该碳同素异形体的电，光，热和磁性能产生重大影响。为了揭示原子尺度上的结构紊乱，已广泛采用诸如扫描隧道显微镜（STM）和原子力显微镜（AFM）等表征技术。这些技术使原子分辨的可视化可视化石墨烯中的晶格缺陷，以及同时询问与结构扰动相关的电子态。这篇简短的综述着重介绍了STM和AFM在研究石墨烯中各种缺陷方面应用的最新进展，包括空位，替代掺杂剂，非六角环，一维均相和杂界以及层间错位和断层的堆叠。对石墨烯结构和拓扑缺陷的内在特性的了解对于开发基于石墨烯的功能材料和相关设备至关重要。

更新日期：2020-01-29

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