Pressure‐Induced Superconductivity in Topological Semimetal Candidate TaTe4,Advanced Electronic Materials

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Pressure‐Induced Superconductivity in Topological Semimetal Candidate TaTe4
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-01-29 , DOI: 10.1002/aelm.201901260
Yifang Yuan _{1,

2} , Weike Wang ₃ , Yonghui Zhou ₁ , Xuliang Chen ₁ , Chuanchuan Gu ₁ , Chao An ₄ , Ying Zhou ₄ , Bowen Zhang _{1,

2} , Chunhua Chen _{1,

2} , Ranran Zhang ₁ , Zhaorong Yang _{1,

4,

5}

Affiliation

Quasi‐1D transition metal tetrachalcogenide TaTe₄ exhibits charge‐density waves (CDW), large anisotropic magnetoresistance, and nontrivial Berry phase at ambient pressure. Pressure‐induced superconductivity is reported in pristine TaTe₄ via electrical transport experiments. It is shown that the superconductivity, first observed at P_c ≈ 8.0 GPa, is robust up to 50.6 GPa. No structural transition is detected up to 21.4 GPa, which indicates the tetragonal structure of TaTe₄ is stable across P_c. Hall resistivity measurements reveal that both electron and hole densities increase sharply upon compression up to P_c and level off at higher pressures, suggesting that the emergent superconductivity of pressurized TaTe₄ can be attributed to the enhancement of the charge carrier density. This finding may provide a new platform to investigate the interplay among superconducting, CDW, and topological orders.

中文翻译：

拓扑半金属候选TaTe4中的压力诱导超导

准一维过渡金属四硫属元素化物TaTe ₄在环境压力下表现出电荷密度波（CDW），大的各向异性磁阻和非平凡的贝里相。通过电传输实验在原始TaTe _4中报告了压力诱导的超导性。结果表明，该超导，首先观察到的P _{c ^} ≈8.0 GPA，是健壮高达50.6 GPA。直到21.4 GPa都没有检测到结构转变，这表明TaTe ₄的四边形结构在P _c上是稳定的。霍尔电阻率测量表明，压缩至P _c时，电子和空穴密度均急剧增加并且在更高的压力下趋于平稳，这表明加压的TaTe ₄出现的超导性可以归因于电荷载流子密度的提高。这一发现可能为研究超导，CDW和拓扑顺序之间的相互作用提供了一个新的平台。

更新日期：2020-03-09

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